Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates

a technology for supporting substrates and semiconductor light-emitting devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical devices, etc., can solve the problems of reducing the reliability of devices, unable to apply a large current to leds, and a lot of constraints in packaging processes, so as to improve the production yield of led chips, reduce the risk of micro-cracks or breaks, and reduce the effect of micro-cracks

US20110127567A1Inactive Publication Date: 2011-06-02LG INNOTEK CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
Publication Date
2011-06-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting structure thin-film and a method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device. The supporting substrate for preparing a semiconductor light-emitting device is formed by successively laminating a sacrificial layer, a heat-sink layer and a bonding layer on a selected supporting substrate. A method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device includes: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is laminated / grown on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate for preparing a semiconductor light-emitting device; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; performing passivation after forming a first ohmic contact electrode on an upper part of the first wafer from which the initial substrate is separated; and preparing a single-chip by severing a result of the passivation.
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Description

TECHNICAL FIELD

[0001] The present invention relates to a supporting substrate for preparing a semiconductor light-emitting device using a multi-layered light-emitting structure thin film and a method for preparing a semiconductor light-emitting device using the supporting substrate for preparing a semiconductor light-emitting device.

[0002] More particularly, in a Group III-V nitride-based semiconductor light-emitting device vertically structured in the up and down ohmic contact electrode structure, it relates to a semiconductor light-emitting device which minimizes damage to a semiconductor single crystal multi-layered light-emitting structure thin film, thereby improving the overall performance, by bonding a multi-layered light-emitting structure thin film formed on an initial substrate (e.g., Al2O3 , SiC, Si, GaAs, GaP) to grow the Group III-V nitride-based semiconductor and a supporting substrate for preparing a semiconductor light-emitting device through wafer bonding and then sep...

Examples

example 1

PREPARATION OF A SUPPORTING SUBSTRATE FOR PREPARING A SEMICONDUCTOR LIGHT-EMITTING DEVICE

Preparation Example 1

Preparation of a Supporting Substrate for Preparing a Semiconductor Light-Emitting Device

[0071]Hereinafter, the structure of a supporting substrate for preparing a semiconductor light-emitting device and its sequential manufacturing method according to an embodiment of the present invention will be described.

[0072]FIG. 4(a) is a sectional view illustrating a supporting substrate for preparing a semiconductor light-emitting device according to an embodiment of the invention.

[0073]Referring to FIG. 4(a), a supporting substrate for preparing a semiconductor light-emitting device 40 includes a selected supporting substrate 400, a sacrificial layer 410, a heat-sink layer 420, and a bonding layer 430.

[0074]A method for manufacturing the above-mentioned supporting substrate for preparing a semiconductor light-emitting device 40 includes: (a) preparing a selected supporting substrat...

example 2

PREPARATION OF A SEMICONDUCTOR LIGHT-EMITTING DEVICE USING A SUPPORTING SUBSTRATE FOR PREPARING A SEMICODUCTOR LIGHT-EMITTING DEVICE

preparation example 1

Preparation of a Semiconductor Light-Emitting Device

[0104]Hereinafter, the structure of a semiconductor light-emitting device using a supporting substrate for preparing a semiconductor light-emitting device and its manufacturing method according to an embodiment of the present invention will be described.

[0105]FIG. 7 is a sectional view illustrating a semiconductor light-emitting device manufactured by using the supporting substrate for preparing a semiconductor light-emitting device according to Example 1 of the present invention. A semiconductor light-emitting device 70 in FIG. 7 is a light-emitting device manufactured by using a supporting substrate for preparing a semiconductor light-emitting device including a heat-sink layer 780 having the thin thickness of 80 μm or less.

[0106]The semiconductor light-emitting device 70 is formed by laminating a first ohmic contact electrode 780, a buffering layer 710, an n-type semiconductor cladding layer 720, a light-emitting active layer 73...