A method for processing zirconia

a zirconia and processing method technology, applied in the direction of polycrystalline material growth, crystal growth process, manufacturing tools, etc., can solve the problems of strength decline, and achieve the effects of increasing the joining area, low dimensional change, and high strength

Inactive Publication Date: 2017-11-30
HAMAMATSU PHOTONICS KK
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The present invention relates to a method for processing zirconia using laser irradiation. The method can result in minimal dimensional changes in the zirconia and high strength while also enhancing the joining ability between zirconia and other materials. The laser irradiation can also lead to the formation of roughness on the zirconia surface, which improves the joining ability and buffering of thermal expansion differences between zirconia and other materials. Additionally, the method can prevent the exfoliation of joined portions and alleviate stress-induced transformation strengthening mechanisms.

Problems solved by technology

However, too much transition amount causes cracks and decreased strength.

Method used

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  • A method for processing zirconia
  • A method for processing zirconia
  • A method for processing zirconia

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[0040]The present invention will be described with reference to the following examples. The scope of the present invention is not limited to these examples.

[0041]The surface of the zirconia which was irradiated with a laser at different pulse durations and intensities was observed. As a reference for the present invention, a laser irradiation was conducted under the conditions out of the range of the present invention.

[0042]As zirconia for laser irradiation, a single crystal Y-stabilized zirconia (containing 11% Y) was prepared and irradiated with a laser under the conditions (pulse duration and intensity) indicated in FIG. 2. The laser wavelength was set to 810 nm. FIG. 2 indicates the photomicrographs of the surface of the laser-irradiated zirconia.

[0043]As indicated in FIG. 2 (1), only the surface of the zirconia irradiated with a laser with a pulse duration of 110 fsec at an intensity of 1015 W / cm2, which is within the range of the present invention, achieved remelting and remov...

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Abstract

A problem to be solved is to provide a method for processing zirconia without producing a monoclinic crystal. The solution is a method for processing zirconia, including the step of irradiating the zirconia with a laser with a pulse duration of 10−12 seconds to 10−15 seconds at an intensity of 1013 to 1015 W / cm2.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a method for processing zirconia, particularly a method for processing zirconia in which zirconia is irradiated with a laser with a pulse duration of 10−12 to 10−15 seconds at an intensity of 1013 to 1015 W / cm2.DESCRIPTION OF THE RELATED ART[0002]Zirconia (ZrO2) has a high melting point of 2715° C., scarcely evaporating below 2200° C., and has excellent heat-resistance, durability, hardness, and chemical stability. Zirconia has been used not only as a refractory material but also as a solid electrolyte utilizing its oxygen ion conductivity. Now, with the mechanical and thermal properties of zirconia attracting attention, it has come to be applied as high mechanical strength and high toughness ceramics.[0003]Non-Patent Literature 1 considers dental applications since zirconia has a remarkably excellent bending strength and fracture toughness compared with many other ceramics.[0004]In cutting processing or perforation proces...

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Application Information

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IPC IPC(8): C04B41/00C04B35/48
CPCC04B41/0045C04B41/009C01P2002/90C04B2235/3248C04B35/48C04B41/80B23K26/38B23K26/402C04B41/0036C04B2111/0025B23K2103/52C30B13/24C30B29/16B23K26/354
InventorKOMEDA, OSAMUKONDO, TAKUYAKAWASHIMA, TOSHIYUKIKAN, HIROFUMISATOH, NAKAHIROSEKINE, TAKASHIKURITA, TAKASHISUNAHARA, ATSUSHIMOTOHIRO, TOMOYOSHIHIOKI, TATSUMIAZUMA, HIROZUMIOHSHIMA, SHIGEKIKAJINO, TSUTOMUKITAGAWA, YONEYOSHIMORI, YOSHITAKAISHII, KATSUHIROHANAYAMA, RYOHEINISHIMURA, YASUHIKOMIURA, EISUKE
OwnerHAMAMATSU PHOTONICS KK