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Film-forming material

a film-forming material and film-forming technology, applied in the field of film-forming materials, can solve the problems of increasing the demand for improving the corrosion resistance of film-forming materials against halogen-based plasma, and achieve the effect of high deposition rate and high corrosion resistan

Inactive Publication Date: 2021-01-21
NIPPON YTTRIUM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a film-forming material that can overcome the shortcomings of related art. The inventors discovered that a mixture of YOXFY and YF3 can be used as a film-forming material and has a high deposition rate. The resultant film also exhibits high resistance to corrosion by plasma caused by halogen-based gases like fluorine or chlorine. This patent aims to provide a better solution for creating high-quality films in various applications.

Problems solved by technology

Moreover, in this document, formation of a film using a thermal spray material containing YOXFY and evaluation of the film are not performed.
Furthermore, the demand for improvement in corrosion resistance of film-forming materials against halogen-based plasma has recently been becoming more and more severe, and in terms of the corrosion resistance, the thermal spray material using the YOF produced in Patent Document 1 leaves room for improvement.

Method used

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  • Film-forming material

Examples

Experimental program
Comparison scheme
Effect test

example 1

Step 1: Mixing of Raw Materials

[0090]First, 100 mol of yttrium oxide Y2O3 powder (D50d=3.2 μm) manufactured by Nippon Yttrium Co., Ltd. and 200 mol of yttrium fluoride YF3 powder (D50d=5.6 μm) manufactured by Nippon Yttrium Co., Ltd. were mixed, and ethanol serving as a solvent for mixing was added to the mixed powder to give a slurry having a solid concentration of 50%. This slurry was subjected to wet grinding using a DYNO-MILL ECM-AP2 (wet bead mill) from Willy A. Bachofen such that D50α of particles after mixing treatment, as determined on a Microtrac (registered trademark) HRA using a method below, was 3 μm or less (specifically, 2.5 μm). The slurry after the wet grinding was dried at 120° C. for 12 hours to give a dry product.

Method for Determining D50α

[0091]About 1 g of ground powder was put in a 100-mL glass beaker, and a 0.2% aqueous solution of sodium hexametaphosphate serving as a dispersion medium was then put in the beaker to the line of 100 mL to prepare a slurry for d...

example 2

[0111]A film-forming material in granular form was obtained in the same manner as in Example 1 except that, in Step 1, the DYNO-MILL ECM-AP2 was replaced by a wet ball mill, and wet grinding was performed such that D50α after mixing treatment as determined on the Microtrac HRA using the above-described method was 2.4 μm. With respect to the obtained film-forming material. D50, the relative intensities of the X-ray diffraction peaks, and the oxygen content were determined in the same manner as in Example 1. Table 2 shows the results. Also, a film was formed from the obtained film-forming material in the same manner as in Example 1.

example 3

[0112]A film-forming material in granular form was obtained in the same manner as in Example 1 except that, in Step 1, instead of ethanol, 1-propanol was used as the solvent for mixing. With respect to the obtained film-forming material, D50, the relative intensities of the X-ray diffraction peaks, and the oxygen content were determined in the same manner as in Example 1. Table 2 shows the results. Also, a film was formed from the obtained film-forming material in the same manner as in Example 1.

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Abstract

A film-forming material of the present invention contains an oxyfluoride of yttrium represented by YOXFY (X and Y are numbers satisfying 0<X and X<Y) and YF3, wherein a ratio I2 / I1 of a peak height I2 of the (020) plane of YF3 to a peak height I1 of the main peak of YOXFY as analyzed by XRD is from 0.005 to 100. It is preferable that a ratio I4 / I1 of a peak height I4 of the main peak of Y2O3 to the peak height I1 of the main peak of YOXFY as analyzed by XRD is 0.01 or less.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Continuation application of co-pending application Ser. No. 16 / 061,242, filed on Jun. 11, 2018, which is the National Phase under 35 U.S.C. § 371 of International Application No. PCT / JP2016 / 087364, filed on Dec. 15, 2016, which claims the benefit under 35 U.S.C. § 119(a) to Patent Application No. 2015-255974, filed in Japan on Dec. 28, 2015, all of which are hereby expressly incorporated by reference into the present application.TECHNICAL FIELD[0002]The present invention relates to a film-forming material containing an oxyfluoride of yttrium represented by YOXFY (X and Y are numbers satisfying 0<X and X<Y).BACKGROUND ART[0003]In the fabrication of semiconductor devices, there are cases where a halogen-based gas, such as a fluorine-based gas or a chlorine-based gas, is used in an etching step, such as plasma etching. In order to prevent corrosion of an etching apparatus due to the halogen-based gas, generally, t...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C01F17/00C23C4/04C23C24/04C01F17/265C23C14/48C23C4/12C23C14/06C01F17/218
CPCC01F17/00C23C4/04C23C24/04C01F17/265C23C14/48C01P2002/74C23C14/06C01P2002/72C01P2004/61C01P2004/62C23C4/12C01F17/218C23C14/32H01J37/32477
Inventor SATO, RYUICHIFUKAGAWA, NAOKISHIGEYOSHI, YUJIMATSUKURA, KENTO
Owner NIPPON YTTRIUM