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CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use

a technology of boron surface modification and abrasives, which is applied in the direction of polishing compositions with abrasives, basic electric elements, electric instruments, etc., can solve the problems of unsuitable semiconductor manufacturing, feature distortion, and topography difference between the field of dielectrics

Inactive Publication Date: 2010-03-16
VERSUM MATERIALS US LLC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a chemical-mechanical planarization composition that is useful in polishing semiconductor devices. The composition includes a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, an oxidizing agent, and water. The composition is effective in removing materials and achieving a smooth surface. The technical effects of the invention include improved polishing efficiency and reduced defects in the polishing process. The invention also provides a method for chemical-mechanical planarization of copper substrates, which involves using the described composition.

Problems solved by technology

This feature distortion is unacceptable due to lithographic and other constraints in semiconductor manufacturing.
Another feature distortion that is unsuitable for semiconductor manufacturing is called “erosion.” Erosion is the topography difference between a field of dielectric and a dense array of copper vias or trenches.
This causes a topography difference between the field of dielectric and the dense copper array.
Generally, after removal of overburden copper in step 1, polished wafer surfaces have non-uniform local and global planarity due to differences in the step heights at various locations of the wafer surfaces.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

examples

General

[0094]All percentages are weight percentages and all temperatures are degrees Centigrade unless otherwise indicated.

Chemical Mechanical Planarization (CMP) Methodology

[0095]In the examples presented below, CMP experiments were run using the procedures and experimental conditions given below.

Metrology

[0096]PETEOS and Black Diamond thickness was measured with a Nanometrics, model, #9200, manufactured by Nanometrics Inc, 1550 Buckeye, Milpitas, Calif. 95035-7418. The metal films were measured with a ResMap CDE, model 168, manufactured by Creative Design Engineering, Inc, 20565 Alves Dr, Cupertino, Calif., 95014. This tool is a four-point probe sheet resistance tool. Twenty-five and forty nine-point polar scans were taken with the respective tools at 3-mm edge exclusion.

CMP Tool

[0097]The CMP tool that was used is a Mirra®, manufactured by Applied Materials, 3050 Boweres Avenue, Santa Clara, Calif. 95054. A Politex® embossed pad, supplied by Rohm and Haas Electronic Materials, 380...

examples 1-6

Example 1 (Comparative)

Procedure for Mixing the Polishing Slurry, 1.5 kg Batch Size

[0112]A polishing slurry was prepared comprising 2 weight % 3-nitrobenzenesulfonic acid, 5 weight % hydrogen peroxide, and 3 weight % unmodified colloidal silica abrasive; as described below and in Table 1. In a 3 liter beaker, 1099.6 g of deionized water were transferred, and maintained under agitation using a magnetic stirrer. Under agitation, 150 g of potassium-stabilized silica (30 weight % sol) was added over a period of 2 minutes. After completing the addition of silica, 0.35 g of potassium hydroxide (45 weight % solution) was added under agitation. After mixing for additional 5 minutes, 30 g of 3-nitrobenzenesulfonic acid was added during a period of 5 minutes. Finally, 250 g of hydrogen peroxide (30 weight % solution) was added to produce the formulated polishing slurry, prior to polishing blanket copper, tantalum nitride, Black Diamond®, and PETEOS wafers using a Mirra® CMP tool. The polishin...

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PUM

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Abstract

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Application No. 60 / 712,773, filed Aug. 31, 2005. The disclosure of this provisional application is hereby incorporated by reference.FIELD OF THE INVENTION[0002]This invention relates to an improved composition and process for the chemical mechanical polishing or planarization of semiconductor wafers. More particularly, it relates to such a composition and process tailored to meet more stringent requirements of advanced integrated circuit fabrication.[0003]The invention relates to chemical mechanical polishing of substrates using a boron surface-modified abrasive and a fluid composition comprising a nitro-substituted sulfonic acid compound and a per-compound oxidizing agent, and particularly relates to a method of polishing substrates comprising copper, at least one barrier material, and at least one dielectric material using a chemical-mechanical polishing system comprising a boron surfa...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/302H01L21/461
CPCC09G1/02H01L21/31053H01L21/3212
Inventor COMPTON, TIMOTHY FREDERICKSIDDIQUI, JUNAID AHMEDZUTSHI, AJOY
Owner VERSUM MATERIALS US LLC