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Method for producing a group III nitride semiconductor

a technology of nitride and semiconductor, applied in the direction of semiconductor devices, coatings, chemical vapor deposition coatings, etc., can solve the problems of production cost, and achieve the effect of reducing production cost and good surface flatness and crystallinity

Active Publication Date: 2015-12-15
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach effectively enhances the surface flatness and crystallinity of Group III nitride semiconductors without the need for high-temperature thermal treatment, thereby reducing production costs and improving the quality of the semiconductor layers.

Problems solved by technology

However, the method disclosed in Japanese Patent Application Laid-Open (kokai) No. 2010-10363 requires thermal treatment process at a high temperature, and there was a problem of production cost.

Method used

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  • Method for producing a group III nitride semiconductor
  • Method for producing a group III nitride semiconductor
  • Method for producing a group III nitride semiconductor

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0031]Firstly, a sapphire substrate 10 having a c-plane main surface was prepared. One surface of the sapphire substrate was patterned by ICP dry etching (FIG. 1A). The pattern includes a dot pattern in which concaves and convexes are periodically arranged or a stripe pattern. In the case of dot pattern, each dot has a planar shape of hexagon, rectangle, triangle, circle, and others, and a three-dimensional shape of pyramid, circular cone, prism, cylinder, truncated pyramid, circular truncated cone, and others which respectively have the above-mentioned planar shape on the top surface of the dot.

[0032]The pattern preferably has a depth (height of dot pattern convex, depth of dot pattern concave, or depth of stripe groove) of 0.1 μm to 10 μm. When the depth is less than 0.1 μm, the light extraction efficiency is not sufficiently improved in the light emitting device according to the present invention. When the depth exceeds 10 μm, the pattern of the Group III nitride semiconductor fo...

embodiment 2

[0040]A method for producing the Group III nitride semiconductor according to Embodiment 2 is the same as the production method according to Embodiment 1 except that thermal treatment is not performed before the formation of the buffer layer 20. That is, while the temperature is kept at a normal temperature without performing thermal treatment after the sapphire substrate 10 was patterned, the AlN buffer layer 20 is formed by magnetron sputtering.

[0041]The method for producing the Group III nitride semiconductor according to Embodiment 2 also allows the formation of Group III nitride semiconductor layer 30 having good surface flatness and crystallinity, similar to the case of the production method according to Embodiment 1. Moreover, since thermal treatment is not performed, the production process can be simplified and the production cost can be reduced. This is because the sapphire substrate 10 is heated by the magnetron sputtering, which substitutes for thermal treatment before th...

embodiment 3

[0043]As shown in FIG. 6A, a sapphire substrate 11 having a c-plane main surface was prepared. One surface of the sapphire substrate was patterned by ICP dry etching to have a periodical concave and convex pattern. The shape, size and concave depth of pattern are the same as those according to Embodiment 1.

[0044]Subsequently, the patterned sapphire substrate 11 was subjected to thermal treatment in a hydrogen or nitrogen atmosphere at a temperature of more than 800° C. to 1100° C. The pressure was normal. In the thermal treatment, heating was stopped to lower the temperature to a normal temperature immediately after heating to a designated temperature. The thermal treatment may be performed using a magnetron sputtering apparatus used in the next process or other device.

[0045]Next, the patterned sapphire substrate 11 was placed in a chamber of the magnetron sputtering apparatus. With the sapphire substrate 11 heated from 200° C. to less than 700° C., an AlN buffer layer 21 was formed...

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Abstract

The surface of a sapphire substrate having a c-plane main surface is patterned by ICP dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° C. or at a temperature of more than 800° C. to 1100° C. An AlN buffer layer is formed by magnetron sputtering on the surface on the patterned side of the sapphire substrate heated at a temperature of 200° C. to less than 700° C. On the buffer layer, a Group III nitride semiconductor layer having a c-plane main surface is formed so as to have a thickness of 1 μm to 10 μm by MOCVD.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a method for forming a Group III nitride semiconductor by MOCVD after forming an AlN buffer layer on a patterned sapphire substrate by sputtering.[0003]2. Background Art[0004]Since the lattice constant of sapphire is significantly different from that of Group III nitride semiconductor in forming a Group III nitride semiconductor on the sapphire substrate by MOCVD, a buffer layer is formed between the sapphire substrate and the Group III nitride semiconductor to reduce the lattice mismatch, thereby improving the crystallinity of the Group III nitride semiconductor. Generally, the buffer layer is made of AlN or GaN grown by MOCVD at a low temperature, but a technique to form the buffer layer by sputtering is also known.[0005]In the method for producing a Group III nitride semiconductor light-emitting device, the Group III nitride semiconductor layer is formed via the buffer layer on the pa...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/00H01L21/02C23C16/02C23C16/30H01L33/00
CPCH01L21/02365C23C16/0218C23C16/0272C23C16/303H01L21/0242H01L21/0243H01L21/0254H01L21/0262H01L21/02458H01L21/02576H01L21/02579H01L21/02631H01L21/02658
Inventor NAKADA, NAOYUKI
Owner TOYODA GOSEI CO LTD
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