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Quartz glass body having improved resistance against plasma corrosion, and method for production thereof

a glass body and plasma technology, applied in the field of glass bodies, can solve the problems of severe problems on conventional quartz glass, large corrosion on the surface of quartz glass, and inconvenient use of quartz glass

Inactive Publication Date: 2010-04-20
HERAEUS QUARZGLAS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010]In order to accomplish the aforementioned objects, the present invention provides a quartz glass body having improved resistance against plasma corrosion, provided that the quartz glass contains bubbles and crystalline phase (foreign matters) at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
[0018]Furthermore, not only can a single metallic element be employed, but it is also effective to co-dope with a plurality of metallic elements.
[0042]The second embodiment of the present invention, which comprises diffusing and doping a doping substance in the gaseous state inside the porous body, can be defined as a CVD process. The porous SiO2 body is allowed to stand still and subjected to a heat treatment in an atmosphere containing the metallic element at a gas density of 0.1 mol / 22.4 liter to 10 mol / 22.4 liter. After the treatment is continued for a long time, until the gas is sufficiently diffused in the porous body, the temperature is lowered so that the metallic element may reside uniformly inside the porous body in the form of oxides without causing local concentration. Since an increase in gas density increases the concentration of the oxide residing in the porous body, it is more effective to set the heating temperature as low as possible while setting the pressure as high as possible. The heating temperature is preferably set to a temperature not lower than the boiling point, the gasification point, or the decomposition point of the metallic element or of the compound thereof, and the pressure is preferably set in a range of from 1 to 10 atomspheres.
[0048]Then, the metallic element is fused on the surface and baked by means of flame melting, electric heating, arc melting, etc. In such a case, it is preferred to use a quartz glass jig previously doped with a metallic element, because the metallic element can be incorporated at a high concentration in the entire body. Furthermore, such a quartz glass jig exhibits affinity with the surface containing the metallic element at a high concentration to prevent cracks and the like from being formed during cooling.

Problems solved by technology

Since the boiling point of the thus generated SiF4 is −86° C., it easily volatilizes so as to cause great corrosion on the surface of the quartz glass.
Thus, quartz glass was found to be unsuitable for use as jigs exposed to a F-based gaseous plasma because thinning and surface roughening proceed on the surface of the quartz glass.
As described above, severe problems were found to develop on conventional quartz glass in manufacturing semiconductors employing plasma reaction with regard to resistance against plasma corrosion, particularly, in case of applying etching treatment using a F-based gaseous plasma.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0052]A 1900-g portion of quartz particles were mixed with 100 g of Al2O3 powder, and the resulting mixture was dropped and fused in an oxyhydrogen flame at a rate of 50 g / min on a target ingot being rotated at a speed of 1 rpm to obtain a quartz glass ingot 200 mm in diameter and 50 mm in length. The gas condition was set to flow gaseous H2 at a rate of 200 liter / min and gaseous O2 at a rate of 100 liter / min. The target ingot was then set inside a vessel having a volume 300 mm×300 mm and 200 mm in height. If the gases were flowed at a rate lower than the conditions above, bubbles and crystalline phase were observed to generate, and if they were flowed at a rate higher than above, the shape of the ingot was no longer retained. The temperature of the growing plane of the ingot was found to be 2,200° C.

[0053]The ingot thus prepared was subjected to fluorescent X-ray analysis to obtain aluminum concentration. As a result, the average concentration in a region from the surface ranging t...

example 2

[0056]Quartz particles were dropped and fused in an oxyhydrogen flame at a rate of 50 g / min on a target ingot being rotated at a speed of 1 rpm, and simultaneously, a 30% aqueous solution of aluminum nitrate was supplied dropwise to the growing surface of the ingot at a rate of 10 cc / min to obtain a quartz glass ingot 200 mm in diameter and 50 mm in length. The gas condition was set to flow gaseous H2 at a rate of 150 liter / min and gaseous O2 at a rate of 75 liter / min. The target ingot was then set inside a vessel having a volume 300 mm×300 mm×200 mm high.

[0057]On measuring the aluminum concentration of the thus prepared quartz glass ingot by means of fluorescent X-ray analysis, a concentration of 3.0 wt. % was obtained for the outermost surface portion (to a depth of 0.1 mm from the surface) and 1.0 wt. % for the portion at a depth of 5 mm from the surface. The outermost surface portion is believed to yield a high concentration due to progressive gasification of quartz. The average...

example 3

[0058]A quartz glass ingot was prepared in the same manner as in Example 2, except for using zirconium oxynitrate as a doping material in the place of aluminum nitrate. The zirconium concentration was measured for the thus prepared quartz glass ingot, and measurements were performed for the items similar to those described in Example 1. The results are given in Table 1. It has been confirmed that the product yields excellent resistance against plasma corrosion.

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Abstract

An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.

Description

TECHNICAL FIELD OF THE INVENTION[0001]The present invention relates to a quartz glass body, and especially to a quartz jig for use in producing semiconductors yet having excellent resistance against plasma corrosion, and to a production method thereof.RELATED ART[0002]In the production of semiconductors, for instance, in the production of semiconductor wafers, with the recent trend in increasing the diameter, the process efficiency is improved by using a plasma reaction apparatus in the etching process and the like. For instance, in the process of etching semiconductor wafers, etching treatment is performed by using gaseous plasma; for example, a fluorine (F) based gaseous plasma.[0003]However, if a conventionally used quartz glass is placed, for instance, in a F-based gaseous plasma, SiO2 undergoes reaction with the F-based gaseous plasma on the surface of the quartz glass surface so as to generate SiF4. Since the boiling point of the thus generated SiF4 is −86° C., it easily volat...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): B32B15/00C03B19/01C03B19/06C03B19/14C03B32/00C03C1/00C03C3/06C03C21/00C03C23/00C30B25/12C30B31/14
CPCC03B19/01C03B19/066C03B19/1453C03B20/00C03B32/00C03C3/06C30B25/12C30B31/14C30B35/00C03B2201/30C03B2201/32C03B2201/34C03B2201/40C03B2201/42C03B2201/50C03B2201/54C03C2201/32Y10T428/24496Y10T428/26Y10T428/315
Inventor SATO, TATSUHIROYOSHIDA, NOBUMASAFUJINOKI, AKIRAINAKI, KYOICHISHIRAI, TOMOYUKI
Owner HERAEUS QUARZGLAS
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