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Process for preparing lead sulfur family compound semiconductor single crystal

A technology of chalcogenides and semiconductors, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of long cycle, slow growth speed, small crystal size, etc., and achieve the effect of fast growth rate

Inactive Publication Date: 2007-10-24
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is also a growth using the vapor phase transport method, such as using AgI vapor as the transport carrier, similar to the above-mentioned sublimation method, transporting the vapor of lead chalcogenides to the crystal grains, and then growing step by step, However, its growth rate is still slow, and the size of the grown crystals is also small, and the period is long.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Preparation of PbS semiconductor single crystal:

[0017] (1) Metal Pb powder and chemical element S powder with a high purity of 99.9999% (6N, that is, the purity of 6 nines) are used, and weighed according to a 1:1 molar (mol) ratio, wherein considering the volatilization of S, the S powder is usually Add 0.1% amount again, both are placed in the raw material melting reaction zone of the lower end of outer quartz tube; PbS semiconductor seed crystal is placed at the shrinkage narrow tube neck of inner quartz tube top in addition, and its crystal face can be selected as ( 100), (110) or (111);

[0018] (2) The bottom edge of the inner quartz tube with an open bottom and the tube wall at the lower part of the outer quartz tube are welded by brazing to fix the inner quartz tube; then the narrow neck of the outer quartz tube is shrunk on the upper part Use a vacuum pump to evacuate the vacuum to make the vacuum in the quartz tube reach 10 -4 Pa or 10 -5 Pa, followed by...

Embodiment 2

[0023] The steps for preparing a PbSe semiconductor single crystal in this embodiment are exactly the same as those in the above-mentioned embodiment 1. The difference is: metal Pb powder with 6N purity and chemical element Se powder are used, weighed at a mol ratio of 1:1, and the excess of Se powder is increased by 0.1%; the raw materials Pb and Se are heated in a vertical heating furnace to the melting point of PbSe at 1065°C , after reaching the melting point, rise 20°C to 1085°C, keep melting, and then drop to the melting point temperature of 1065°C after 1 day.

[0024] The obtained PbSe semiconductor single crystal has an average single crystal diameter of 25-30mm according to detection.

Embodiment 3

[0026] Preparation of PbTe semiconductor single crystal:

[0027] The steps for preparing a PbTe semiconductor single crystal in this embodiment are exactly the same as those in the above-mentioned embodiment 1. The difference is: use metal lead powder with 6N purity and chemical element Te powder, and weigh according to 1:1 mol ratio, wherein Te powder is increased by 0.1% in excess; the raw materials Pb and Te are heated to the melting point of PbTe at 924°C in a vertical heating, After reaching the melting point, raise the temperature by 20°C, raise the temperature to 944°C, keep melting, and then cool down to the melting point temperature of 924°C after 1 day.

[0028] The obtained PbTe semiconductor single crystal has an average single crystal diameter of 25-30 mm according to detection.

[0029] The essence of the method of the invention is to grow and prepare a semiconductor single crystal through melt vapor deposition, and grow a single crystal material according to a...

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Abstract

The invention relates to a chalcogenide of lead semi-conducting crystal growth and preparation method, which pertains to semi-conducting crystal preparation domain. The invention comprises the following steps: fetching high-purity lead powder and chalcogen according to certain mole ratio; placing the mixture in quartz capsule with vacuum degree of 10-4Pa or 10-5Pa; melting it in vertical heater to generate chalcogenide of lead such as PbS, PbSe and PbTe; heating and keeping it under the temperature of 20Deg C higher than fusing point; cooling to fusing point and running motor to pull quartz tube with the speed of 5-7mm / day for 10 days. The essence of the invention is that semi-conducting crystal is prepared by vapour deposition. The big size single crystal that is made by the method can be used in high integrated level detector or sensitive function block.

Description

technical field [0001] The invention relates to a growth and preparation method of a lead chalcogenide semiconductor single crystal. The lead chalcogenide PbS, PbSe or PbTe belongs to the technical field of semiconductor single crystal preparation technology. Background technique: [0002] Lead chalcogenides, including PbS, PbSe and PbTe compound semiconductors, have a narrow band gap and can be used to make various infrared detectors, lasers, field effect tubes, thermal devices and other optical and magnetic components. A functionally integrated device with comprehensive characteristics of electricity, sound and sound. Such materials have been reported in foreign literature as early as the 1970s. So far, the growth methods of semiconductor single crystals include vapor phase transport growth, sublimation growth, Bridgeman method, liquid phase and vapor phase epitaxy, molecular beam epitaxy, and several other methods. As far as vapor phase growth is concerned, it is discus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46
Inventor 张建成吴汶海
Owner SHANGHAI UNIV
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