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Ultra-short cavity semiconductor laser and preparing method thereof

An ultra-short cavity, semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of difficult manufacturing process, low yield, and cannot be smaller than 250μm, and achieves simple process, high repeatability, and yield. high effect

Inactive Publication Date: 2008-03-26
ADVANCED OPTRONIC DEVICES CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current single-mode laser is made into a planar strip structure through the process to realize the lateral and lateral refractive index guidance of the active area. The disadvantage is that the manufacturing process is difficult to obtain process results with high repeatability, and the yield is extremely low. As a result, the price of the product is expensive. The reason for the analysis is that under the normal cleavage process, due to the limitation of the thickness and width ratio of the semiconductor wafer, the cavity length of the single-mode semiconductor laser is very long, generally not less than 250 μm. In this case, the semiconductor laser must be processed into a planar strip structure to achieve single-mode operation

Method used

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  • Ultra-short cavity semiconductor laser and preparing method thereof
  • Ultra-short cavity semiconductor laser and preparing method thereof

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example 1

[0037] Refer to Figure 2 and Figure 3: Both ends of the cavity use a micro-cleavage process, which in turn includes the following steps:

[0038] A. Use the MOCVD system to sequentially grow N-type indium phosphide lower transition layer 2-1, N-type selective etching sacrificial layer 2-2, and N-type indium phosphide on the top surface of N-type (100) indium phosphide substrate 1 Upper transition layer 2-3, N-type indium phosphide confinement layer 2-4, quantum well structure layer 3, P-type confinement layer 4, P-type ohmic contact layer 5, and P-type electrodes are plated on the P-type ohmic contact layer 5 Metal film 6, N-type selective etching sacrificial layer 2-2 uses indium aluminum gallium arsenide, quantum well structure layer 3 uses indium gallium arsenide phosphorus, P-type confinement layer 4 uses indium phosphide, and P-type ohmic contact layer 5 uses indium gallium Arsenic phosphorus

[0039] B. On the surface of the P-type electrode metal film 6, two "V"-shaped groo...

example 2

[0048] Refer to Figure 4 and Figure 5: One end of the cavity uses a micro-cleavage process, and the other end uses a common cleavage method, which includes the following steps in turn:

[0049] A. Use the MOCVD system to sequentially grow N-type indium phosphide lower transition layer 2-1, N-type selective etching sacrificial layer 2-2, and N-type indium phosphide on the top surface of N-type (100) indium phosphide substrate 1 Upper transition layer 2-3, N-type indium phosphide confinement layer 2-4, quantum well structure layer 3, P-type confinement layer 4, P-type ohmic contact layer 5, and P-type electrodes are plated on the P-type ohmic contact layer 5 Metal film 6, N-type selective etching sacrificial layer 2-2 uses indium gallium arsenide phosphorus, quantum well structure layer 3 uses indium aluminum gallium arsenide, P-type confinement layer 4 uses indium phosphide, and P-type ohmic contact layer 5 uses indium aluminum arsenic;

[0050] B. On the surface of the P-type elec...

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Abstract

The super short cavity semiconductor laser machine includes N model phosphor indium down transitional layer, N model choosing eroding sacrificing layer, N model phosphor indium above transitional layer, N model phosphor indium restricting layer, the quanta trap fabric layer, the P model restricting layer, the P model ohm contacting layer developed by the MOCVD system in turn on the peak of the underlay of the N model (100) phosphor indium, the P model electrode metal film is platted on the P model ohm contacting layer, it can be produced by the tiny dispelling process, the process is easy, the repeating character is good, the stability is good, the percentage of the producing the production is above 80%.

Description

Technical field [0001] The invention relates to a semiconductor laser, more specifically to an ultra-short cavity semiconductor laser and a preparation method thereof. Background technique [0002] Single-mode semiconductor lasers have many advantages such as good mode, low threshold, good stability, long life, high modulation rate, high integration, small divergence angle, and high coupling efficiency. They are optical disk storage, laser printing, optical fiber communication, sensing, and measurement. The key components of new optoelectronic technology. The current single-mode laser is made into a planar strip structure through a process to realize the lateral and lateral refractive index guidance of the active area. The disadvantage is that the manufacturing process is difficult to obtain high repeatability process results, and the yield is extremely low. As a result, the product is expensive. Analysis of the reason is that under the normal cleavage process, due to the limitat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00H01S5/24H01S5/34
Inventor 蒋伟刘凯张彦伟孙夕庆
Owner ADVANCED OPTRONIC DEVICES CHINA