Process for preparing silumin electronic package materials

An electronic packaging material, high silicon aluminum alloy technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of circuit operating temperature rise, component failure rate increase, heat generation rate increase, etc., to improve thermal conductivity. , the effect of reducing porosity and porosity, and promoting connectivity

Inactive Publication Date: 2008-08-13
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The improvement of chip integration will inevitably lead to an increase in its heat generation rate, which will cause the operating temperature of the circuit to rise continuously, resulting in an increase in the failure rate of components

Method used

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  • Process for preparing silumin electronic package materials
  • Process for preparing silumin electronic package materials
  • Process for preparing silumin electronic package materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A), powder preparation

[0019] Industrial pure aluminum and high-purity silicon are melted in an induction furnace with a mass ratio of 8.8:1.2, heated to 75°C, fully stirred, and melted with a flux (30% NaCl+47% KCl+23% cryolite by mass percentage) Cover the slagging, and use hexachloroethane (C 2 Cl 6 ) outgassing. The metal droplets are injected into the spray device through the leak nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed into the high-pressure water flow 200mm away from the nozzle. After cooling, the water flow containing Al-Si alloy powder passes through the screen and leaks out. Miscellaneous flows into the high-speed rotating dryer for dehydration treatment, and the required Al-12Si powder is obtained after drying and sieving. The powder-making process parameters are attached in Table 1.

[0020] Table 1 Milling Process Parameters

[0021]

[0022] B), hot extrusion process

[0023] The Al-12Si alloy po...

Embodiment 2

[0029] A), powder preparation

[0030] Industrial pure aluminum and high-purity silicon are melted in an induction furnace according to a mass ratio of 8:2, heated to 900°C, fully stirred, and covered with a flux (30% NaCl+47%KCl+23% cryolite by mass percentage) Slag, and with hexachloroethane (C 2 Cl 6 ) outgassing. The metal droplets are injected into the spray device through the leak nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed into the high-pressure water flow 200mm away from the nozzle. After cooling, the water flow containing Al-Si alloy powder passes through the screen and leaks out. Miscellaneous flows into the high-speed rotary dryer for dehydration treatment, drying and sieving to obtain the required Al-20Si powder, and its powder-making process parameters are attached in Table 2.

[0031] Table 2 Milling Process Parameters

[0032]

[0033] B), hot extrusion process

[0034] The Al-20Si alloy powder is initially ...

Embodiment 3

[0040] A), powder preparation

[0041] Industrial pure aluminum and high-purity silicon are melted in an induction furnace with a mass ratio of 7.4:2.6, heated to 1050°C, fully stirred, and covered with a flux (30% NaCl + 47% KCl + 23% cryolite by mass percentage) Slag, and with hexachloroethane (C 2 Cl 6 ) outgassing. The metal droplets are injected into the spray device through the leak nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed into the high-pressure water flow 200mm away from the nozzle. After cooling, the water flow containing Al-Si alloy powder passes through the screen and leaks out. Miscellaneous flows into the high-speed rotary dryer for dehydration treatment, drying and sieving to obtain the required Al-26Si powder, and its powder-making process parameters are attached in Table 3.

[0042] Table 3 Milling Process Parameters

[0043]

[0044] B), hot extrusion process

[0045] The Al-26Si alloy powder is initially ...

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Abstract

The invention discloses a making technology of high-silafont electronic packing material, which comprises the following steps: A) preparing powder: blending industrial pure aluminum and high-pure silicon at 6-8.8:4-1.2 percentage to prepare Al-Si alloy powder; B) loading Al-Si alloy powder in the pure aluminum; proceeding squeezing disposal on the 300-500 ton hydrostatic machine through forward squeezing pattern; keeping temperature at 400-520 deg.c for 0.5-2 h for Al-Si alloy powder before squeezing; C) proceeding high temperature oxidation for squeezed material; keeping temperature at 300-500 deg.c for 48-96 h under 0.6-0.8 Mpa oxygen pressure to produce the product. The invention can improve heat conductivity, airtightness and tensile strength obviously, which keeps low expansion coefficient.

Description

technical field [0001] The invention relates to a preparation process of an aluminum-silicon electronic packaging material, in particular to a preparation process of a high-silicon aluminum alloy electronic packaging material. Background technique [0002] Since the first semiconductor integrated circuit came out in 1958, so far, the development of IC chip integration has basically followed the MOORE law. The improvement of chip integration will inevitably lead to the increase of its heating rate, which makes the operating temperature of the circuit rise continuously, which leads to the increase of component failure rate. At the same time, electronic packaging is also constantly developing in the direction of miniaturization, light weight and high-density assembly. Since the 1990s, various high-density packaging technologies, such as chip size packaging (CSP), multi-chip components ( The continuous emergence of MCM) and SLIM have further increased the heat generation rate p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/29B22F9/08
Inventor 杨伏良张伟甘卫平易丹青刘泓
Owner CENT SOUTH UNIV
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