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Amorphous diamond intensified frequency substrate of thin-film sound surface wave device and its preparing method

A surface acoustic wave device, amorphous diamond technology, applied in electrical components, impedance networks, etc., can solve the problems of inability to achieve frequency increase effect, high stress of diamond film, and difficulty in practical application of diamond film.

Inactive Publication Date: 2008-11-19
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that under the existing technology level, the interdigitated lines cannot be infinitely miniaturized, which leads to the inability to increase the propagation speed of the sound wave, and the existing technology deposits a diamond-like carbon film with high stress and cannot achieve the effect of frequency increase. In order to solve the problem that the diamond thin film is difficult to be practically applied, a method for preparing the amorphous diamond frequency-increasing substrate of the thin-film surface acoustic wave device is provided, which uses the thin-film composite structure of IDT / ZnO / a-D / / Si to replace the traditional Surface acoustic wave device structure (i.e., IDT / bulk piezoelectric material), and use filtered cathode vacuum arc system to deposit amorphous diamond (a-D) film instead of polycrystalline diamond film deposited by CVD and deposited by magnetron sputtering Amorphous carbon (a-C) or hydrogenated amorphous carbon (a-C:H) films

Method used

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  • Amorphous diamond intensified frequency substrate of thin-film sound surface wave device and its preparing method
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  • Amorphous diamond intensified frequency substrate of thin-film sound surface wave device and its preparing method

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specific Embodiment approach 1

[0011] Embodiment 1: The amorphous diamond frequency-increasing substrate of the thin-film surface acoustic wave device in this embodiment is to deposit an amorphous diamond film on a polished single crystal silicon wafer by using a filter cathodic vacuum arc deposition system, and the amorphous diamond The thickness of the thin film is 50nm-3000nm. The thickness of the amorphous diamond frequency-increasing substrate prepared in the present invention is determined according to the requirements of the frequency-increasing design and the actual conditions of the deposition process.

specific Embodiment approach 2

[0012] Specific embodiment two: The preparation method of the amorphous diamond frequency-increasing substrate of the thin-film surface acoustic wave device of the present embodiment is carried out according to the following steps: 1. Frequency-increasing design: analyze the layered structure surface acoustic wave propagation state equation, and establish a membrane Layer parameters (such as film thickness) and the function relationship between the speed of sound, and then predict the thickness of the amorphous diamond frequency-increasing substrate according to the magnitude of the frequency increase required; 2. Pretreatment: single-sided polished single-crystal silicon wafer with acetone Clean it in an ultrasonic cleaning machine, then take out the silicon wafer and dry it with a hair dryer; 3. Ion etching: install the silicon wafer processed in step 2 on the substrate chuck of the filter cathode vacuum arc system, and place the silicon wafer The polished surface of the wafe...

specific Embodiment approach 3

[0025] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the cleaning time in the ultrasonic cleaning machine in Step 2 is 15 minutes. Other steps are the same as in the second embodiment.

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Abstract

This invention relates to a non-crystal diamond up-frequency substrate of a film sound surface wave device, which is manufactured by depositing a non-crystal diamond film on a polished monocrystal silicon plate utilizing the filter cathode vacuum arc deposition system. The thickness of the non-crystal diamond film is 50nm-3000nm. The method includes the following steps: 1, up-frequency design, 2, pretreatment, 3, ionic etching, 4, film deposition, 5, annealing.

Description

technical field [0001] The invention relates to the field of a frequency-increasing substrate and a frequency-increasing method with a multilayer structure thin film surface acoustic wave device, in particular to a preparation method of an amorphous diamond frequency-increasing substrate. Background technique [0002] The surface acoustic wave (SAW) device is a new type of electronic device that appeared in the middle and late twentieth century. After years of development, different forms of SAW devices such as filters, oscillators, amplifiers, delay lines, convolutions, and memories have been developed. Wave devices are widely used in different fields such as broadcasting, television, communication, radar, sonar, sensing, radio remote control and electronic countermeasures. The working principle of the surface acoustic wave device is: at the input end of the interdigital transducer (IDT), the input electrical signal is converted into an acoustic signal by using the inverse ...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H3/08H03H9/25
Inventor 朱嘉琦韩杰才韩潇程坤杨瑾
Owner HARBIN INST OF TECH