Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof

A technology of humidity sensor and resistive type, which is applied in the field of polymer resistive thin film humidity sensor and its production, can solve the problems of poor adhesion between wet film and electrode base material, unsatisfactory long-term stability and reliability, and constraints Practical application and further development and other issues, to achieve the effect of good wet response characteristics, high stability, high water resistance characteristics

Inactive Publication Date: 2008-12-03
ZHEJIANG UNIV
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it still has the problem of unsatisfactory long-term stability and reliability, which hinders and restricts its practical application and further development.
This is mainly because the resistive humidity-sensitive material usually has poor water resistance, and the adhesion between the moisture-sensitive film and the electrode base material is not good, and it is easy to swell and fall off in a high-humidity environment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof
  • High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof
  • High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1. Electrode cleaning

[0023] The glass-ceramic interdigitated gold electrodes were soaked and cleaned in absolute ethanol and acetone, and dried for later use.

[0024] 2. Preparation of γ-aminopropyltriethoxysilane quaternary ammonium salt

[0025] Add γ-aminopropyltriethoxysilane and n-butane bromide in a molar ratio of 1:2 to react, and react in an argon atmosphere at 40°C for 30 hours for quaternization; then raise the temperature to 50°C at The hydrolysis reaction was carried out under acidic conditions for 3 hours; it was precipitated with ether and dried in vacuum to obtain γ-aminopropyltriethoxysilane quaternary ammonium salt.

[0026] 3. Preparation of moisture-sensitive film and post-treatment by dip coating

[0027] Adopt dip-coating machine to immerse the glass-ceramic interdigitated gold electrode in the moisture-sensitive liquid (the dehydrated ethanol solution of the gamma-aminopropyl triethoxysilane quaternary ammonium salt of 30% by weight concentra...

Embodiment 2

[0031] 1. Electrode cleaning is the same as in Example 1

[0032] 2. Preparation of γ-aminopropyltriethoxysilane quaternary ammonium salt

[0033] Add γ-aminopropyltriethoxysilane and n-bromobutane in a molar ratio of 1:1 to react, and react in an argon atmosphere at 45°C for 25 hours for quaternization; then heat up to 60°C in The hydrolysis reaction was carried out under acidic conditions for 2 hours; it was precipitated with ether and dried in vacuum to obtain γ-aminopropyltriethoxysilane quaternary ammonium salt.

[0034] 3. Preparation of moisture-sensitive film and post-treatment by dip coating

[0035] Adopt dip-coating machine to immerse the glass-ceramic interdigitated gold electrode into the moisture-sensitive solution (the absolute ethanol solution of the gamma-aminopropyltriethoxysilane quaternary ammonium salt of 40% by weight concentration), after 2 minutes, with Pull at a speed of 4mm / second, take it out and place it in a constant temperature oven, and heat-tr...

Embodiment 3

[0040] 1. Electrode cleaning is the same as in Example 1

[0041] 2. Preparation of γ-aminopropyltriethoxysilane quaternary ammonium salt

[0042] Add γ-aminopropyltriethoxysilane and n-butane bromide in a molar ratio of 1:0.5 to react, and react in an argon atmosphere at 50°C for 20 hours for quaternization; then raise the temperature to 70°C in The hydrolysis reaction was carried out under acidic conditions for 1 hour; precipitation with ether and vacuum drying gave γ-aminopropyltriethoxysilane quaternary ammonium salt.

[0043] 3. Preparation of moisture-sensitive film and post-treatment by dip coating

[0044]Adopt dip-coating machine to immerse the glass-ceramic interdigitated gold electrode in the moisture-sensitive liquid (the dehydrated alcohol solution of the gamma-aminopropyltriethoxysilane quaternary ammonium salt of 50% by weight concentration), after 1 minute, with Pull at a speed of 6mm / sec, take it out and place it in a constant temperature oven, and heat-trea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
interdigital gapaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a kind of high bear the high mark sub-electric resistance of water characteristic a type a quick component with wet thin film and it creation method. It is made up of the gamma-aminopropyl triethoxysilane and the bromnormal butane which the mole ratio is 1: 0.5~2. The characteristic of that wet quick component is to coat the wet film on the microcline glass surface with the 8~16 pairs of the gold interdigital electrode. The feeling wet film was turned by the quarter to hand over with water solution and the heating for two kinds of above raw materials allied from gather to contain captions electrolyte formatively from gather a thing. The making method of that wet quick component is the method that the adoption handles after immersing craft and the heating, making first have feeling the microcline glass fork of the wet film to point gold electrode, then carry on aging processing system. The invention makes a method in brief; the cost is low, being applicable to batch quantity production particularly. The wet quick component made has the breadth degree of humidity quantity distance, the intelligent degree is high, responding to line a degree good, is high to bear water characteristic particularly, can be applied in accurate diagraph and control of process and environment degree of humidity extensively.

Description

technical field [0001] The invention relates to a high-molecular resistance thin-film moisture-sensitive element with high water resistance and a manufacturing method thereof. Background technique [0002] The progress of society and the development of technology have opened up a vast sensor space for us, and humidity sensors are an important class of chemical sensors. Polymer humidity sensor is a new type of humidity sensor widely used at present, mainly including capacitive type and resistive type. It has a wide range of applications in storage, industrial production, process control, environmental monitoring, household appliances, meteorology, etc. Among them, the polymer resistive humidity sensor has become the trend of research and development because of its good response characteristics, wide range of humidity measurement, simple manufacture, easy integration, miniaturized mass production, and low price. But it still has the problem of unsatisfactory long-term stabil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
Inventor 杨慕杰吕鑫李扬
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com