Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor component and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of affecting component performance, silicon oxide cannot be completely removed, affecting self-aligned metal silicides Process and other issues to achieve the effect of improving sensitivity

Active Publication Date: 2009-03-11
UNITED MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the silicon oxide on the spacer of the transistor cannot be completely removed, and another layer of spacer is formed to cover part of the source / drain region, thereby affecting the subsequent self-aligned metal silicide process.
[0005] In addition, when silicon oxide is used as the self-aligned silicide barrier layer, it often affects the performance of the elements in the photo-sensing area, that is, when light is irradiated on the photo-sensing area, the light incident at a normal or oblique angle may be oxidized Reflected by the silicon layer, resulting in poor sensitivity of the elements in the sensing area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor component and manufacturing method thereof
  • Semiconductor component and manufacturing method thereof
  • Semiconductor component and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] Figure 1A It is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention. Please refer to Figure 1A, the semiconductor device of the present invention includes a substrate 100 , a transistor 102 , a hard mask layer 104 a and an anti-reflection layer 106 . The substrate 100 has a first region 101 and a second region 103 , and an isolation structure 108 is disposed in the substrate 100 . The second region 103 is a photo-sensing region, which has a doped region 105. The type of dopant doped in the doped region 105 is, for example, opposite to that of the surrounding region of the doped region 105, or the doped region 105 is doped. The dopant type of the dopant is, for example, opposite to that of the substrate 100, and forms a PN diode with the substrate 100 below it, that is, when the substrate 100 is a P-type substrate, the doped region 105 is N-type doped, and when the substrate 100 is a For an N-type substrate, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to one semiconductor elements, which comprises one base socket, one transistor, one hard mask layer and one anti-reflection layer, wherein, the base has one first and second areas with second one for light sensitive area; the transistor is set on base of first area; the hard mask layers set on base of second area; anti-reflection layer is set between mask layer and base.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, in particular to a semiconductor element capable of increasing the sensitivity of the element, an interconnection structure, and their respective manufacturing methods. Background technique [0002] A photodiode image sensor is a common image sensing element at present. A typical photodiode image sensor includes at least one reset transistor and a photosensitive area formed by a diode. [0003] In the prior art, a layer of self-aligned silicide (salicide) is usually formed on the source / drain region and the gate of the transistor. In order to avoid forming a metal silicide layer on the photo-sensing area, usually, a self-aligned silicide blocking layer (salicide block, SAB) must be formed on the photo-sensing area before depositing the metal layer. [0004] In a general process, a layer of silicon oxide is first formed on the substrate, and dry etching is performed...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L23/522H01L21/82H01L21/768
Inventor 姜元升陈炫旭
Owner UNITED MICROELECTRONICS CORP