Process for fabricating magnetic direct current magnetron sputtering cobalt target material

Abstract

The invention relates to a method for making a cobalt target for magnetic direct current magnetron sputtering. The cobalt target for direct current magnetron sputtering is used in the production process to obtain a cobalt target with high magnetic permeability, which specifically includes the following steps : 1. Prepare high-purity cobalt raw materials; 2. Melt and cast cobalt raw materials into cobalt ingots; 3. Ingot inspection; 4. Cut cobalt ingots into small flake blanks; In the cyclic process of heat treatment, in the above cyclic process, a strong magnetic field is applied in the direction perpendicular to the rough cobalt ingot to make a cobalt target element; six is ​​processed on the target surface of the cobalt target element in step five to form cobalt Target parts; Seventh, combine the cobalt target parts formed in step six on the back plate to make the final cobalt target. Due to the application of a strong magnetic field in the traditional process, the present invention not only obtains the magnetically induced texture in the <0001> direction, improves the magnetic permeability, but also reduces the difficulty of process control and has good repeatability, so that the traditional process equipment can be utilized, so it is very practical.

Description

technical field [0001] The invention relates to a metal material processing and manufacturing process for the electronic industry, in particular to a method for manufacturing a cobalt target material for magnetic DC magnetron sputtering. Background technique [0002] In the semiconductor integrated circuit process, it is one of the key processes to effectively realize the signal communication between the transistor and each component, and between the external power supply. [0003] See figure 1 As shown, this is a schematic diagram of the structure of a single transistor in an integrated circuit. figure 1 Among them, the number 1 is the silicon substrate, the number 2 is the source and drain of the transistor, the number 3 is the gate dielectric of the transistor, the number 4 is the polycrystalline gate of the transistor, the number 5 is the sidewall of the transistor, and the number 6 is the silicide in contact with the metal of the transistor, and the number is 7 is a m...

AI Technical Summary

Problems solved by technology

[0020] However, such a processing method still has some problems in terms of actual production limit capacity and application stability:

However, in the subsequent work on the cobalt target, due to the induction of working conditions such as magnetic field and high current, some HCP structures will appear one after another. At this time, the orientation and so on are no longer consistent with the original design, disrupting Design the leakage magnetic field distribution, which makes the uniformity of magnetron sputtering problematic, and also prevents the continuation of magnetron sputtering

Therefore, in actual production, the general cobalt target only uses one-half to two-thirds of its thickness before replacing it with a new target due to uniformity and arc extinguishing problems, which is a serious waste and affects the product qualification rate.

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