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A making method of multi-hole buffer layer for releasing stress

A technology for releasing stress and buffer layers, applied in chemical instruments and methods, polycrystalline material growth, from chemically reactive gases, etc., can solve the problem of reducing defect density, stress and bending, sapphire insulating substrates are difficult to achieve, and process steps Many problems, to achieve the effect of small defect density, long life, high device performance

Inactive Publication Date: 2009-07-01
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the stress release problem encountered in the preparation of thin film materials by epitaxial growth, US Patent No. 6579359 proposes a method for absorbing internal stress by using a porous buffer layer to absorb lattice mismatch, heat Stress caused by mismatch, the patent is achieved by anodizing on silicon carbide substrates, but it is difficult to achieve on sapphire insulating substrates
South Korea’s Samsung Corning Company disclosed an epitaxial growth method in Chinese patent application CN1832110A, in which an etching method is used to convert the grown buffer layer into a porous buffer layer. This method can reduce the defect density, stress and bending degree of the material, but There are disadvantages of many process steps and high cost

Method used

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  • A making method of multi-hole buffer layer for releasing stress
  • A making method of multi-hole buffer layer for releasing stress
  • A making method of multi-hole buffer layer for releasing stress

Examples

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Embodiment 1

[0038] Embodiment 1: A method for preparing a high-quality gallium nitride thin film on a silicon substrate

[0039] (1) See attached figure 1 As shown, the in-situ deposition of a thin layer of titanium (Ti) metal is first carried out.

[0040] Using silicon as a single crystal substrate, using MOCVD equipment and Tetrakis (dimethylamido) titanium as a source to deposit a thin layer of titanium (Ti) metal at 1,200-300 ° C, and controlling the thickness to 80 nanometers by adjusting the growth time.

[0041] (2) See attached figure 2 As shown, the above alloy substrate 2 is used, the reaction of MOCVD equipment is raised to 400-500° C., and hydrogen and ammonia are introduced to convert the metal Ti thin layer into a titanium nitride polycrystalline thin film 3 .

[0042] (3) See attached figure 2 As shown, the pore size and distribution of the porous mask can be controlled by controlling the temperature and time. The preparation method is as follows: using MOCVD equipme...

Embodiment 2

[0046] Example 2: A method for preparing a high-quality aluminum nitride film on a sapphire substrate

[0047] (1) Deposition of titanium-aluminum alloy thin layer

[0048] On the sapphire single crystal substrate, a thin layer of titanium-aluminum (TiAl) alloy is deposited by PVD, the thickness is controlled at 80-100 nanometers, and the deposition time is controlled to control the thickness and composition gradient of the alloy.

[0049] (2) Put the above alloy substrate into the MOCVD epitaxy equipment, raise the temperature to 400-600°C, and pass in hydrogen and ammonia gas to convert the thin layer of metal TiAl alloy into a porous mask of aluminum titanium nitride (TiAlN). The temperature and nitriding time are used to control the mask thickness and mask aperture.

[0050] (3) On the above-mentioned TiAlN porous mask layer, pass through ammonia gas and trimethylgallium aluminum at 800-900°C, deposit for 6-8 minutes, and anneal at 1400°C for 15 minutes, and the amorphous...

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Abstract

The invention discloses a growing method of a porous buffer layer, and belongs to the field of thin film preparation. The utility model is characterized in that metal alloy is used to prepare the porous buffer layer. The method includes the steps that a thin film deposition apparatus is utilized, and a metal alloy thin layer deposits on the single crystal substrate to form a nitride porous mask layer; a layer of unformed epitaxial materials deposit on the mask layer, and through the annealing and other epitaxial means, nano columns grow at net holes of the mask layer only; subsequently, growth conditions are changed to cause the array of the nano columns to combine into a flat surface, and the porous buffer layer is formed; at last, a high-quality thin film of required thickness is grown from the flat surface. The synthetic method of the porous buffer layer is simple, a thin film or a device made by the method has the advantages of small defect density, long service life and high period performance.

Description

technical field [0001] The invention relates to a method for growing thin film materials, in particular to a method for improving the quality of thin film materials by preparing a porous buffer layer in situ. Background technique [0002] Since the end of the last century, III-V nitride semiconductors have developed rapidly. The market size in the field of blue light and green light has reached tens of billions of dollars, but there is still a distance from the requirements of white light lighting. One of the problems is material defects. The density is high, and the device life is short. In addition, there are very few applications in the ultraviolet band (wavelength 210-370nm). The main problem is that the density of material defects generally makes the power of ultraviolet devices not high. It can be seen that the inherent defects of raw materials limit the further development of III-V nitride semiconductors. [0003] Due to the hexagonal symmetry of sapphire, the meltin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/205C30B25/04C30B25/18C30B25/22C30B29/40
Inventor 王怀兵
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI