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Ferroelectric thin-membrane phase shifter, and method for detecting and optimizing reflection characteristics

A ferroelectric thin film and phase shifter technology, which is applied in phase shifting networks, circuits, electrical components, etc., can solve the problems of strong reflection loss and deterioration of transmission loss, and achieve the goal of reducing reflection loss, improving quality factor, and improving transmission characteristics Effect

Active Publication Date: 2009-07-08
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this single-period loading ferroelectric adjustable capacitor structure, as the frequency increases, the reflection loss becomes stronger and the corresponding transmission loss gradually deteriorates.

Method used

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  • Ferroelectric thin-membrane phase shifter, and method for detecting and optimizing reflection characteristics
  • Ferroelectric thin-membrane phase shifter, and method for detecting and optimizing reflection characteristics
  • Ferroelectric thin-membrane phase shifter, and method for detecting and optimizing reflection characteristics

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Embodiment 1

[0026] figure 2 with 3 In, transmission line 21L sect1 and transmission line 22L sect2 are part of transmission line 2, keep L sect1 and L sect2 The total length remains the same, changing the clip in L sect1 and L sect2 between the positions of the ferroelectric tunable capacitor 5, that is connected at the L sect1 C at the end BST1 s position. When the ferroelectric tunable capacitor 5C BST1 From a single periodic structure (ie L sect1 = L sect2 ) increase L sect1 When the length of the circuit is viewed from the input end to the right, its input impedance will increase with C BST1 The location of the different, that is to say, the input impedance of the input impedance is matched. Judging from the frequency response characteristic curve of the circuit, the reflection loss of the circuit is relatively small. exist figure 2 with 3 There is no difference in all ferroelectric tunable capacitors, figure 2 C in BST1 and C BST2 They are exactly the same, and ...

Embodiment 2

[0029] image 3 Among them, on a magnesium oxide substrate with an area of ​​5mm×10mm, the surface is plated with a gold conductive film, and a 300nm thick barium strontium titanate film is deposited on the area where the adjustable capacitor 5 is formed, a double periodic structure is used. image 3 The layout of the phase shifter structure is shown. Figure 5 It is the frequency response curve of the phase shifter obtained after computer simulation optimization, wherein, S11 is the reflection loss of the phase shifter, and S21 is the transmission loss of the phase shifter. from Figure 5 It can be seen that its operating frequency range extends from DC to 14GHz, and in the entire operating frequency range, the extreme value of its reflection loss is less than -17dB and remains at the same magnitude. In this embodiment, the MgO dielectric constant ε selected by simulation r =9.8, dielectric loss 1.6×10 -5 , the thickness of barium strontium titanate film deposited on the ...

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Abstract

The invention discloses a ferroelectric thin film phase shifter, which is used to load a ferroelectric adjustable capacitor on a coplanar line. The coplanar line structure includes a transmission line and two ground planes located on both sides of the transmission line. The ground plane and the transmission line share the same Attached to the same plane of the substrate, there is a slot of equal width between the ground plane and the transmission line. The invention also discloses a method for detecting and optimizing the reflection characteristics of a ferroelectric film phase shifter, keeping the length sum of two adjacent transmission lines in the transmission line unchanged, and changing the position of the adjustable capacitor between the two transmission lines , and then check the reflection and transmission characteristic curves of this structure through computer simulation, mainly focus on the size of the reflection amplitude and the width of the working bandwidth, and compare and judge that the final structure has a relatively small reflection loss and a suitable working bandwidth. The invention can increase the operating frequency bandwidth of the phase shifter, and is beneficial to improving the quality factor of the device in a relatively high frequency range.

Description

technical field [0001] The invention belongs to the field of microwave engineering, and relates to an impedance-matched ferroelectric film phase shifter and a method for detecting and optimizing its reflection characteristics. Background technique [0002] Phased array antennas are widely used in radar and communication fields. In high-precision phased array antennas, the cost of the phase shifter accounts for about 40% of the cost of the entire antenna. So far, the most widely studied phase shifters are based on ferrite bulk materials and semiconductor switching tubes. The phased array antenna made of ferrite block is not easy to process. In addition, its volume is relatively large, power consumption is large, and the response of beam scanning to control signals is relatively slow. Therefore, there are obvious deficiencies in some fields that require fast beam scanning. Although the phased array antenna based on semiconductor switching tubes can meet the requirements of f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/18H03H11/16H03H17/08H03H9/66
Inventor 张雪强孟庆端李翡孙亮黄建冬张强何豫生李春光何艾生黎红
Owner INST OF PHYSICS - CHINESE ACAD OF SCI