Method for making irregularly surfaced substrate and method for fabricating photovoltaic device
A manufacturing method and substrate technology, applied in the direction of electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as increased costs, and achieve the effects of reduced production rate, high photoelectric conversion characteristics, and efficient manufacturing
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Embodiment 1
[0047] In a 5% by weight aqueous sodium hydroxide solution, 4-propylbenzoic acid (PrBA), 4-tert-butylbenzoic acid (TBBA), 4-n-butylbenzoic acid (NBBA), The additives of 4-pentyl benzoic acid (PeBA), 4-butoxy benzoic acid (BOBA) and 4-n-octyl benzene sulfonic acid (NOBS) are dissolved to prepare a substrate etching solution. In addition, as a comparative additive, 2-ethylbenzoic acid (EBA) was similarly added to the sodium hydroxide aqueous solution to prepare a comparative etching solution. The concentration of the additive is in the range of 0.0001 to 1 mol / L, specifically, PrBA, TBBA, NBBA, PeBA, BOBA is 0.05 mol / L, and NOBS is 0.0004 mol / L.
[0048]
[0049] The etching solution is heated, and the n-type single crystal silicon substrate is immersed in the etching solution at a temperature of about 85° C. for about 30 minutes to etch the surface of the substrate, thereby forming an uneven structure on the surface. The surface of the single crystal silicon substrate on which th...
Embodiment 2
[0055] Regarding 4-butoxybenzoic acid (BOBA), four different batches were used to study the effect of batches. As the etching solution, a solution obtained by dissolving 4-butoxybenzoic acid in a NaOH 5 wt% aqueous solution to a concentration of 0.05 mol / L was used. This etching solution was heated to about 85° C., and the n-type single crystal silicon substrate having a (100) plane was immersed in the heated etching solution for about 30 minutes to etch the surface of the substrate.
[0056] The reflectance of the substrate surface after etching was measured, and Table 4 shows the measurement results. In addition, the reflectance was measured with a spectrophotometer.
[0057] Table 4 shows the results. In addition, a substrate having a reflectance in the range of 13% or less was evaluated as usable, and a substrate outside this range was evaluated as not being usable.
[0058] Table 4
[0059] Reflectivity
[0060] As shown in Table 4. In any one of lot 1 to lot 4, ...
Embodiment 3
[0069] As described above, the method of the present invention, which can be produced more efficiently, is used to form a texture structure on the surface of the substrate, and by forming a semiconductor layer forming a semiconductor junction with the substrate on the substrate, photovoltaics with good photoelectric conversion characteristics can be manufactured. Hit components.
[0070] figure 1 It is a schematic cross-sectional view showing an example of a photovoltaic element manufactured by the manufacturing method of the present invention. Refer to figure 1 On the surface 1a of the n-type single crystal silicon substrate 1 having the (100) plane, the operations described above are performed to form a good pyramid-shaped concavity and convexity. In this surface 1a, for example, 20 to Intrinsic amorphous silicon thin film 2 with a film thickness of 20 to The film thickness of the p-type amorphous silicon thin film 3. On the p-type amorphous silicon film 3, for example, a spu...
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