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Method for preparing Mn-doped ZnS nanostructure

A nanostructure and evaporation source technology, applied in the direction of zinc sulfide, can solve the problems affecting the performance of Mn-doped ZnS nanomaterials, and achieve the effects of easy industrial production, low cost and simple operation.

Inactive Publication Date: 2010-01-20
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In these methods, foreign impurities such as catalyst Au or organic compounds are introduced, which may affect the performance of Mn-doped ZnS nanomaterials to some extent.

Method used

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  • Method for preparing Mn-doped ZnS nanostructure
  • Method for preparing Mn-doped ZnS nanostructure
  • Method for preparing Mn-doped ZnS nanostructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1. Use a blank (no metallized film) silicon wafer as the receiving substrate. Silicon substrates were ultrasonically cleaned in alcohol and acetone, respectively.

[0020] 2. A mixed gas of argon and hydrogen with a flow rate of 110 ml / min (the volume ratio of hydrogen and argon is 10:100) is introduced into the tube furnace.

[0021] 3. ZnS powder and MnCl 2 The powder is placed in a quartz boat as an evaporation source, and the boat with the evaporation source and the cleaned silicon wafer are placed in a tube furnace. Wherein, the evaporation source is placed in the inlet direction of the argon-hydrogen mixed gas flow, the silicon chip is placed in the outlet direction of the argon-hydrogen mixed gas flow, and the horizontal distance between the silicon chip and the evaporation source is 4 mm.

[0022] 4. Raise the temperature of the tube furnace to 900°C, the holding time is 100min, and the pressure in the furnace is 0.015MPa. Cool down with the furnace after the...

Embodiment 2

[0025] 1. Use a blank (no metallized film) silicon wafer as the receiving substrate. Silicon substrates were ultrasonically cleaned in alcohol and acetone, respectively.

[0026] 2. A mixed gas of argon and hydrogen with a flow rate of 113 ml / min (the volume ratio of hydrogen and argon is 13:100) is fed into the tube furnace.

[0027] 3. ZnS powder and MnCl 2 The powder is placed in a quartz boat as an evaporation source, and the boat with the evaporation source and the cleaned silicon wafer are placed in a tube furnace. Wherein, the evaporation source is placed in the inlet direction of the argon-hydrogen mixed gas flow, the silicon chip is placed in the outlet direction of the argon-hydrogen mixed gas flow, and the horizontal distance between the silicon chip and the evaporation source is 3mm.

[0028] 4. Raise the temperature of the tube furnace to 910°C, the holding time is 200min, and the pressure in the furnace is 0.015MPa. Cool down with the furnace after the growth ...

Embodiment 3

[0030] 1. Use a blank (no metallized film) silicon wafer as the receiving substrate. Silicon substrates were ultrasonically cleaned in alcohol and acetone, respectively.

[0031] 2. A mixed gas of argon and hydrogen with a flow rate of 108 ml / min (the volume ratio of hydrogen and argon is 8:100) is introduced into the tube furnace.

[0032] 3. ZnS powder and MnCl 2 The powder is placed in a quartz boat as an evaporation source, and the boat with the evaporation source and the cleaned silicon wafer are placed in a tube furnace. Among them, the evaporation source is placed in the direction of the inlet of the argon-hydrogen mixed gas flow, the silicon chip is placed in the direction of the outlet of the argon-hydrogen mixed gas flow, and the horizontal distance between the silicon chip and the evaporation source is 6mm.

[0033] 4. Raise the temperature of the tube furnace to 920°C, the holding time is 60min, and the pressure in the furnace is 0.03MPa. Cool down with the furn...

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Abstract

The invention provides a preparation method of Mn-doped ZnS nano-structure, which belongs to the technology field of semiconductor nano-material preparation. The method is characterized in including adopting a manner of chemical gas deposition, charging mixed gas of the argon gas and the hydrogen gas at a flow rate of 108-113 ml / min into a pipe heater, and evaporating the ZnS powder and the MnCl2 powder in the mixed atmosphere of the argon gas and the hydrogen gas; and heating the pipe heater to 900-920 DEG C, maintaining the temperature for 60-200min and furnace-in pressure of 0.015-0.03MPa, and depositing Mn-doped ZnS nano-structure on a blank silicon wafer. An evaporation source is arranged in an inlet direction of mixed gas stream of the argon gas and the hydrogen gas, the silicon wafer is arranged in an outlet direction of the mixed gas stream of the argon gas and the hydrogen gas, and horizontal distance between the silicon wafer and the evaporation source is 3-6mm. The method is capable of obtaining high purity and high crystalline quality Mn-doped ZnS nano-material without catalyst, and has simple preparation, low cost and easy operation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and relates to a preparation method of nanoscale Mn-doped ZnS. Background technique [0002] In recent years, semiconductor nanomaterials have attracted the attention of scholars at home and abroad due to their unique physical properties such as quantum confinement effects, nonlinear optical behavior, and anomalous luminescence, and have become one of the research hotspots in the field of materials. Zinc sulfide (ZnS) is a luminescent material matrix with unique properties. By changing the dopant in it, efficient visible radiation in different bands can be obtained, and true full-color luminescence can be realized. Researchers have done a lot of pioneering work to realize the full color of ZnS-based luminescent materials, improve their luminous efficiency, and improve their photoelectric properties. Especially in 1994, Bhargava first reported the doping of Mn in Zn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/08
Inventor 常永勤
Owner UNIV OF SCI & TECH BEIJING
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