Method for simulating complex environment in low earth orbit space, and equipment of use
A technology of space recombination and low-Earth orbit, applied to chemical instruments and methods, instruments, laboratory appliances, etc., can solve the problems of insufficient atomic oxygen energy, low atomic oxygen energy, and low flux of atomic oxygen beams, and achieve The effect of technical ease
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0031] As shown in Figure 1, the device used in the method of the present invention is composed of a vacuum chamber 2, a target 1, a magnetic coil and a sample stage 7, wherein the vacuum chamber 2 as a whole is cross-shaped, and the middle part is provided with a 45° angle with the sample stage 7 directly below. The target; the side wall of the vacuum chamber is connected to the microwave source through the quartz window 9, the waveguide is connected to the oxygen generator through the pipeline; the magnetic force coil is arranged on the side wall of the vacuum chamber 2, and the magnetic field lines generated by it pass through the surface of the target 1. , the magnetic field is a horizontal magnetic field; the target 1 is a stacked structure of metal molybdenum sheet and stainless steel, and a voltage-adjustable DC power supply is positively connected to the shell of the vacuum chamber 2 and negatively connected to the target 1 . The ultraviolet light source 3 is installed ...
Embodiment 2
[0037] The difference from Example 1 is:
[0038] Device (see Fig. 1): turn on the ultraviolet light source 3 (the present embodiment adopts an ultraviolet deuterium lamp); the sample table 7 is a hollow cylinder, the middle of which is provided with liquid nitrogen (a liquid nitrogen inlet 5 is provided), and the side wall is provided with a heating device 4 (platinum resistance wire); the sample stage is also used as a small temperature control platform.
[0039] Method: Coating a layer of SiO with a thickness of about 1 μm on polyimide by magnetron sputtering 2 film, put the sample on the sample stage, and evacuate the vacuum chamber to 1.2×10 -4 A 30 minute vacuum pre-out was performed. Then under the condition that the microwave power is 2000W and the oxygen flow rate is 5SCCM, the sample stage is adjusted to 9cm away from the target, the magnetic field (intensity is 0.7mT) and the microwave source are turned on, and a 30V negative bias is applied on the target. A 15eV...
Embodiment 3
[0041] The difference from Example 2 is:
[0042] The size after ultrasonic cleaning with acetone is 30×30×0.5mm 3 Put the polyimide on the sample stage, and evacuate the vacuum chamber to 1.2×10 -4 A vacuum pre-out was performed for 60 minutes. Then under the condition that the microwave power is 500W and the oxygen flow rate is 0.5SCCM, adjust the sample stage to 9cm away from the target, turn on the magnetic field (adjust the magnetic field strength to 0.9mT) and the microwave source, and apply a 20V negative bias on the target. At this time, a 6.5 eV oxygen atom flow is generated in the vacuum chamber. Adjust the pressure of feeding liquid nitrogen to 0.01MPa, and the heating power to 30W; turn on the power supply of the ultraviolet light source (ultraviolet deuterium lamp, the wavelength is 115-400nm), irradiate the sample stage, adjust the distance between the ultraviolet light source and the sample stage to be 7cm, and the radiation intensity is about 5 suns; samples...
PUM
Property | Measurement | Unit |
---|---|---|
magnetic flux density | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com