Cleaning liquid composition for plasma etching residues in semi-conductor industry

Abstract

The invention discloses a cleaning liquid combination used for removing plasma-etching residue in semiconductor industry. The cleaning liquid comprises amount of solvent used for effectively washing, buffer aqueous solution, fluoride, antifreeze agent, polymer inhibitor. The cleaning liquid combination of the invention can effectively clean plasma-etching residue in semiconductor industry without eroding SiO2, PETEOS, silicon, low medium material and some metals such as Ti, Al and Cu.

Description

technical field [0001] The invention relates to a cleaning liquid composition, in particular to a cleaning liquid composition used for plasma etching residues in the semiconductor industry. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step uses dry ashing to remove most of the photoresist layer...

AI Technical Summary

Problems solved by technology

This type of cleaning solution usually cannot control the etching rate of metals and non-metals at the same time. After cleaning, it is easy to change the characteristic size of the channel, thereby changing the semiconductor structure; and because of its large etching rate, the cleaning operation window is very small. can have various negative effects

[0004] The inhibitors used in the prior art have pyrocatechol and pyroglucinol. On the one hand, these inhibitors cannot simultaneously control the etching rate of metals and oxides; on the other hand, they have a strong effect on the environment and human beings.

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