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Material for forming film and method for producing film

A film and raw material technology, applied in the direction of metal material coating process, coating, zinc organic compounds, etc., can solve the problems of precursor deterioration, lack of solution, and the volatility of precursor may not be satisfied, and achieve good stability. Good performance, good productivity and good volatility

Inactive Publication Date: 2008-02-27
ADEKA CORP
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process using a solution such as solution CVD or MOD method, there is a problem that a solution in which no solid phase exists in the solution raw material cannot be obtained at a concentration suitable for use
As an aliphatic hydrocarbon solvent, it may not be able to provide sufficient solubility. For alcohol-based solvents, there is a problem of deterioration of the precursor due to the reaction between bis(pentane-2,4-diketonyl)zinc and the hydroxyl group of the alcohol.
The liquid bis(β-diketone)zinc disclosed in Patent Document 5 can avoid these problems due to its sufficient solubility, but it does not necessarily satisfy the volatility of the precursor itself.

Method used

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  • Material for forming film and method for producing film
  • Material for forming film and method for producing film

Examples

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Embodiment

[0050] Hereinafter, the present invention will be described in more detail through production examples, evaluation examples, and examples. However, the present invention is not limited in any way by the following Examples and the like.

manufacture example

[0051] [Production example] Production of bis(pentane-2,4-diketono)zinc anhydrate

[0052] For commercially available bis(pentane-2,4-diketone)zinc (manufactured by Kanto Chemical Co., Ltd.), the water of hydration was removed by sublimation purification operation under heating and reduced pressure, and the yield obtained from the fraction at 130°C and 30Pa was 60% bis(pentane-2,4-diketonyl)zinc anhydrate. For the obtained crystals, IR, 1 H-NMR, elemental analysis of carbon and hydrogen and TG-DTA, identified as bis(pentane-2,4-diketonyl)zinc anhydrate.

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Abstract

The present invention provides a raw material which is suitable for making the thin film containing the zinc and a method for making the thin film using the chemical gas phase deposit method of the raw material. The film forming raw material is formed by the solution which is dissolved by 0.1 to 1 mol bis (pentane-2, 4-diketo) zinc anhydrate as the essential component relative to the organic solvent which does not contain hydroxyl, and the steam which is got by gasifying the film forming used raw material and contains bis (pentane-2, 4-diketo) zinc anhydrate is leaded to the substrate, and the steam is decomposed and / or chemically reacted to form a thin film containing zinc atom on the substrate.

Description

technical field [0001] The present invention relates to a raw material for forming a thin film containing zinc, and more specifically relates to bis(pentane-2,4-diketonyl)zinc anhydrate in which 0.1 to 1 mole is dissolved as an essential component with respect to 1000 ml of an organic solvent A raw material for forming a thin film formed from a solution and a method for producing a thin film using the raw material for forming a thin film. Background technique [0002] Thin films containing zinc have various properties such as optical properties, electrical properties, and catalytic activity, and are used as components of electronic or optical components. [0003] As the manufacturing method of the above-mentioned thin film, MOD methods such as flame deposition method, sputtering method, ion spraying method, coating thermal decomposition method or sol-gel method, chemical vapor deposition method, etc. can be mentioned. Chemical vapor deposition (hereinafter, sometimes simply...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/448
CPCC07F3/06C23C16/407C23C16/45525
Inventor 山田直树芳仲笃也田中伸一
Owner ADEKA CORP
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