Method for magnetron sputtering coppering film on SiC micro-particle surface

A magnetron sputtering plating and micro-particle technology, which is applied in sputtering plating, ion implantation plating, vacuum evaporation plating, etc., can solve the problems of poor film uniformity, weak adhesion, poor compactness, etc., and achieve adhesion Strong, dense and uniform effect

CN101135045AInactive Publication Date: 2008-03-05CHINA NAT ACAD NANOTECH & ENG +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2008-03-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

The magnetically controlled sputtering process for coating copper film on the surface of SiC grain features that metal copper film is deposited on the surface of SiC grain in 0.1-500 micron size as the substrate inside magnetically controlled sputtering equipment with copper target of 99.999 % purity by means of regulating the vibrating power of ultrasonic wave and the oscillation frequency of sample holder to disperse SiC grains homogeneously and controlling the operation pressure inside the vacuum chamber, sputtering power, temperature, sputtering period and other technological conditions. The technological process is simple, low in cost and without waste pollution, and the prepared film is homogeneous and continuous.
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Description

(1) Technical field:

[0001] The invention relates to a method for magnetron sputtering a metal thin film on the surface of microparticles, in particular to a method for magnetron sputtering copper coating on the surface of SiC microparticles. (two) background technology:

[0002] SiC particles are a ceramic material with excellent performance, which has the advantages of high hardness, wear resistance, high temperature resistance, and low cost. basic ingredients. Many researchers at home and abroad are actively working on the applied basic research of SiC particles. However, the wettability of SiC particles with some metals is not good, so it is often necessary to pre-plate copper on the surface of SiC particles to improve the bonding between them and metals in the preparation of composite materials.

[0003] In recent decades, some research has been done on the surface coating of SiC particles at home and abroad. Electroplating, electroless plating, sol-gel method and oth...

Examples

Embodiment 1

[0027] Embodiment 1: a kind of method (seeing Fig. 1 and 2) of magnetron sputtering copper plating film on SiC microparticle surface, it is characterized in that it comprises the following steps:

[0028] (1) Prepare microparticle magnetron sputtering coating equipment;

[0029] (2) Open the vacuum chamber and install the sample dish loaded with 4g SiC particles on the sample stage;

[0030] (3) Close the vacuum chamber, turn on the mechanical pump to evacuate to 3.30Pa;

[0031] (4) Turn on the molecular pump to evacuate to 3.0×10 -3 Pa;

[0032] (5) Open the flowmeter and fill the vacuum chamber with argon to 0.7Pa;

[0033] (6) Turn on the ultrasonic wave and the sample holder swing device, the ultrasonic vibration power is 12w, and the swing frequency of the sample stage is 10 times / min;

[0034] (7) Turn on the sample heater, and the heating temperature is 100°C;

[0035] (8) Turn on the target power supply, adjust the power to 280w, and start sputtering coating;

...

Embodiment 2

[0039] Embodiment 2: a kind of method (seeing Fig. 1 and 3) of magnetron sputtering copper plating film on SiC microparticle surface, it is characterized in that it comprises the following steps:

[0040] (1) Prepare microparticle magnetron sputtering coating equipment;

[0041] (2) Open the vacuum chamber and install the sample dish loaded with 4g SiC particles on the sample stage;

[0042] (3) Close the vacuum chamber, turn on the mechanical pump to evacuate to 2.5Pa;

[0043] (4) Turn on the molecular pump to evacuate to 2.0×10 -3 Pa;

[0044] (5) Open the flowmeter and fill the vacuum chamber with argon to 0.4Pa;

[0045] (6) Turn on the ultrasonic wave and the sample holder swing device, the ultrasonic vibration power is 20w, and the swing frequency of the sample stage is 8 times / min;

[0046] (7) Turn on the sample heater, and the heating temperature is 200°C;

[0047] (8) Turn on the magnetron sputtering target power supply, adjust the power to 350w, and start sput...