Strip preparation method of graphics ferroelectric lead zirconate titanate film

A lead zirconate titanate, ferroelectric thin film technology, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., to achieve the effect of improving compatibility, improving quality, and avoiding strong acid corrosive liquids

Inactive Publication Date: 2008-03-05
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is in order to overcome a series of problems that exist in the patterning method of existing PZT thin film, and propose a kind of stripping preparation method of patterned lead zirconate titanate ferroelectric thin film; This method is relative to dry etching method , the equipment is simpl

Method used

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  • Strip preparation method of graphics ferroelectric lead zirconate titanate film
  • Strip preparation method of graphics ferroelectric lead zirconate titanate film

Examples

Experimental program
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Effect test

Embodiment 1

[0050] 1) Clean the silicon substrate

[0051] The silicon substrate 1 is first cleaned with an acidic cleaning solution or an alkaline cleaning solution, and then rinsed with deionized water;

[0052] 2) Preparation of zinc oxide sacrificial layer

[0053] Prepare a 0.01 μm zinc oxide sacrificial layer 2 on the cleaned substrate 1 by radio frequency sputtering equipment; coat a positive photoresist on the surface of the zinc oxide 2, and use the negative plate of the PZT film pattern to photoresist the positive photoresist Engraving exposure, using phosphoric acid as an etching solution to wet pattern the sacrificial layer 3;

[0054] 3) Preparation of PZT film guiding layer

[0055] Prepare a 0.01 μm PZT film guiding layer 4 on the patterned sacrificial layer 3 by using sputtering equipment, and the heating temperature of the substrate is 650°C;

[0056] 4) Preparation of PZT Pu membrane

[0057] A 0.01 μm PZT thin film 4 is prepared by sputtering equipment, and the heatin...

Embodiment 2

[0061] 1) Clean the potassium nitride substrate

[0062] The potassium nitride substrate 1 is first cleaned with an acid cleaning solution or an alkaline cleaning solution, and then rinsed with deionized water;

[0063] 2) Preparation of zinc oxide sacrificial layer

[0064] Prepare a 0.01 μm zinc oxide sacrificial layer 2 on the cleaned substrate 1 by radio frequency sputtering equipment; coat a positive photoresist on the surface of the zinc oxide 2, and use the negative plate of the PZT film pattern to photoresist the positive photoresist Engraving exposure, using phosphoric acid as an etching solution to wet pattern the sacrificial layer 3;

[0065] 3) Preparation of PZT film

[0066] A 0.01 μm PZT thin film 4 is prepared by sputtering equipment, and the heating temperature of the substrate is 200° C.;

[0067] 4) Patterned PZT film

[0068] Put the substrate after the above process into the sodium hydroxide etching solution, release the sacrificial layer, and peel off...

Embodiment 3

[0070] 1) Clean the potassium arsenide substrate

[0071] The potassium arsenide substrate 1 is first cleaned with an acid cleaning solution or an alkaline cleaning solution, and then rinsed with deionized water;

[0072] 2) Preparation of zinc oxide sacrificial layer

[0073] Prepare a 5 μm zinc oxide sacrificial layer 2 on the cleaned substrate 1 by metal-organic decomposition method equipment; apply a negative photoresist on the surface of the zinc oxide sacrificial layer 2, and use a positive version of the PZT film pattern to negative photoresist Photolithographic exposure to form a sacrificial layer photoresist pattern; using phosphoric acid as an etching solution to wet-etch the patterned sacrificial layer 3;

[0074] 3) Preparation of PZT film

[0075] A 10 μm PZT thin film 4 is prepared by the sol-gel method, and the maximum heating temperature of the substrate is 800°C;

[0076] 4) Patterned PZT film

[0077] Put the substrate after the above process into the pho...

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Abstract

The method comprises: coating a 0.01-10000 mu m thick zinc oxide sacrificial layer on the baseplate; using the photo etching and corrosion technology to pattern the sacrificial material; at the area where the PZT film will be reserved, the sacrificial layer will be etched; at the area where the PZT film will be stripped, the sacrificial layer will be reserved; after patterning, the PZT film is be coated on the sacrificial material; releasing the sacrificial layer; expose the PZT film pattern.

Description

technical field [0001] The invention relates to a peeling preparation method of patterned lead zirconate titanate ferroelectric film; Background technique [0002] PZT thin films are often used as functional thin film materials in the manufacturing process of semiconductors and MEMS, and are widely used in uncooled infrared detectors, non-volatile ferroelectric memories, various piezoelectric microsensors and actuators and other semiconductor and microelectromechanical system devices. At present, the patterning techniques of PZT thin films mainly include: wet etching and dry etching. Since the wet etching of PZT contains highly corrosive acids, it has poor compatibility with the manufacturing process of semiconductors and micro-electronic mechanical systems, and it is difficult to etch out patterns. Difficult to be completely corroded clean. Dry etching has the disadvantages of high equipment cost, difficult control of the end point, and easy damage to other thin film lay...

Claims

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Application Information

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IPC IPC(8): G03F7/42H01L21/027
Inventor 李俊红汪承灏解述
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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