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Nanocrystalline porous TiO2 film and preparation method thereof

A nanocrystalline and thin-film technology, applied in chemical instruments and methods, gaseous chemical plating, coating, etc., can solve environmental pollution and other problems, and achieve the effects of simple equipment, less pollution, and low cost

Inactive Publication Date: 2008-04-23
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with the CVD method, the sol-gel method has the advantages of easy control of the stoichiometric ratio, low process temperature, easy large-area film formation and simple equipment, but the TiO prepared by the sol-gel method 2 Thin films are usually amorphous and require further annealing at 300-800°C to achieve TiO 2 crystallization, and as a wet preparation process, it is easy to cause environmental pollution

Method used

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  • Nanocrystalline porous TiO2 film and preparation method thereof
  • Nanocrystalline porous TiO2 film and preparation method thereof
  • Nanocrystalline porous TiO2 film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] use figure 1 The plasma reactor shown. Under normal temperature and pressure, two coaxial quartz glass tubes with a thickness of 2mm are used as the blocking medium, aluminum foil electrodes, the electrode thickness is 0.2mm, the electrode spacing is 8mm, and the power supply is 1000W. The bias voltage is 300v, and the pulse ratio is 0.18.

[0034] Ultrasonic clean the ordinary glass slide, place it at 0.5mm below the reactor, and now pass pure Ar (1SLM) for 5 minutes, and then pass O2 and the mixed gas of the monomer brought in by Ar, the mixing ratio is TiCl4: O2:Ar=1:5:100, flow rate 1SLM, take out the sample after discharge for 3 minutes, observe with scanning electron microscope, it is crystal structure with porous structure, grain size is 100-500nm, pore size is 20-5000nm. SEM as figure 2 shown.

Embodiment 2

[0036] use figure 1 The plasma reactor shown. Under normal temperature and pressure, a coaxial alumina ceramic tube with a thickness of 3mm is used as the blocking medium, an aluminum foil electrode, the electrode thickness is 0.2mm, the electrode spacing is 10mm, and the power supply is 2000W. Bias - 600V. Ultrasonic clean the silicon wafer, place it 5mm below the reactor, pass pure Ar (1SLM) for 5 minutes, and then pass O2 and the mixed gas of TEOS monomer brought in by Ar, the mixing ratio is TEOS:O2: Ar=1:50:300, the flow rate is 5SLM, the sample is taken out after 10 minutes of discharge, and observed by a scanning electron microscope, it is a porous crystal structure with a grain size of 20-200nm and a pore size of 20-3000nm. SEM as image 3 shown.

Embodiment 3

[0038] use figure 1 The plasma reactor shown. Under normal temperature and pressure, two layers of coaxial quartz glass tubes with a thickness of 2mm are used as the barrier medium, aluminum foil electrodes, the electrode thickness is 0.2mm, the electrode distance is 5mm, and the power supply is 500W. Bias -200V.

[0039] Ultrasonic clean the quartz plate, place it 1mm below the reactor, pass pure He (1SLM) into it for 5 minutes, then pass into the mixed gas of O2 and TiCl4 monomer brought in by He, the mixing ratio is TiCl4:O2: Ar=1:10:500, flow rate 0.5SLM, the sample was taken out after 15 minutes of discharge, observed under a polarizing microscope, and a bright crystal grain structure was displayed under polarized light. Polarizing microscope such as Figure 4 shown.

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Abstract

The present invention relates to a nano crystal porous titanium dioxide film and its preparation method. Said film is a film with TiOn structure, in which n is 1.5-2.5, it is a polycrystalline crystal structure, its grain size is 10-500nm and its pore size is 10-500nm. Its preparation method includes the following steps: (1), cleaning matrix material by using ultrasonic wave, drying and placing the cleaned and dried matrix material in the lower portion of plasma reactor, introducing carrier gas inert gas; (2), introducing mixed gas of oxygen gas and titanium-containing gas carried by carrier gas, applying high-votage etectricity, regulating biasing electrode and pulse bias voltage, forming active granules containing titanium, under the action of biased polarization and acceleration forming wire-mesh structure, at the same time making the active granules containing titanium be carried onto matrix material surface and deposited; and (3), after the reaction deposition taking out matrix material, on the surface of matrix material can obtain the nano crystal porous TiO2 film.

Description

technical field [0001] The present invention belongs to TiO 2 The field of film and its preparation method, especially related to a kind of nanocrystalline porous TiO 2 Thin films and methods for their preparation. Background technique [0002] Due to the nanoporous TiO 2 High specific surface area and nanostructure, with unique photocatalytic and photoelectric conversion characteristics, have attracted more and more attention from the scientific and technological circles. But by nano TiO 2 The porous structure formed by powder processing has disadvantages such as easy deactivation, easy agglomeration, and difficulty in recycling, which limits its application to a certain extent. [0003] In recent years, TiO 2 Thin films have been widely studied and have been researched and applied in dye-sensitized new solar thin film cells, photocatalytic thin films, sensor thin films, etc., and have broad application prospects. [0004] Preparation of Nano-TiO 2 There are many met...

Claims

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Application Information

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IPC IPC(8): B01J21/06C01G23/047C23C16/40
Inventor 李岩徐绍魁刘伟何涛过凯孙滨璇陆修来杨沛林徐金洲张菁
Owner DONGHUA UNIV
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