Method for vacuum scattering intermetallic compound for coupling TiAL
An intermetallic compound, vacuum diffusion technology, applied in metal processing equipment, welding equipment, non-electric welding equipment and other directions, can solve the problems of high temperature and high pressure of diffusion bonding.
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specific Embodiment approach 1
[0007] Specific Embodiment 1: The method of vacuum diffusion bonding TiAl intermetallic compounds in this embodiment is realized through the following steps: 1. Clean the surface of the base metal before diffusion bonding; 2. Place the diffusion intermediate layer evenly to be welded The connecting surface of the base metal; the middle layer of the diffusion connection is hydrogenated titanium or titanium alloy foil, and the thickness of the diffusion connection middle layer is 30-100 μm; 3. Place the clamped weldment in a vacuum diffusion welding machine for heating, In a vacuum of 1.33×10 -3 ~4.0×10 -3 Diffusion connection is carried out under Pa vacuum condition; 4. After welding, the weldment is depressurized when the original vacuum condition drops to 100°C, and the weldment is taken out when the temperature is lowered to room temperature.
[0008] In this implementation method, the diffusion bonding process parameters should adopt the corresponding diffusion bonding tem...
specific Embodiment approach 2
[0009] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the surface of the parent material is cleaned by physical cleaning, chemical cleaning or first physical cleaning followed by chemical cleaning; the physical cleaning is performed with 400 # 、50 # 、600 # , 80 # 、1000 # The metallographic sandpaper is polished step by step; the chemical cleaning is to prepare the corresponding corrosion solution according to the difference of the base metal to remove the adsorption layer, impurities or oxide film on the surface of the base metal, and then wipe the surface of the base metal to be welded with acetone or remove the base metal The materials were cleaned ultrasonically in acetone solution. Other process conditions and processes are the same as those in Embodiment 1.
specific Embodiment approach 3
[0010] Embodiment 3: This embodiment is different from Embodiment 1 in that: in step 2, the thickness of the intermediate layer is diffusion-connected to 30-80 μm. Other process conditions and processes are the same as those in Embodiment 1.
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