Connection method for metal target material and target holder

A technology of metal target material and connection method, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem that the bonding strength of the target and the target support is difficult to meet the requirements, and the butting surface of the target material and the target support is difficult to complete. Density, affecting sputtering heat conduction, etc., to avoid high environmental conditions, simple connection methods, and improve thermal and electrical conductivity.

Inactive Publication Date: 2008-05-14
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the mechanical compression method, it is difficult for the butt surface of the target material and the target support to be completely dense, and possible gaps will reduce the bonding strength between the target material and the target support, and at the same time affect the heat conduction during the sputtering process
Target welding includes brazing, diffusion welding, etc. Brazing connection is used. For large-size target components, the bonding strength between the target and the target support is difficult to meet the requirements; when diffusion welding is used, the welding temperature is relatively high. Small size target components are prone to deformation during the welding process, and the microstructure will change under high temperature, which will affect the performance of the sputtering target

Method used

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  • Connection method for metal target material and target holder
  • Connection method for metal target material and target holder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as figure 1 , 2 In the connection structure of the target material and the target support shown, the target material 1 and the target support 3 are welded and fixed by the filled brazing material 2 .

[0024] Al-Si alloy target material and Al alloy target holder combination is one of the most commonly used materials for making interconnection wires at present. During production, the target material 1 and target holder 3 are firstly processed by a milling machine. In the Al-Si target 5 dovetail-shaped bosses are processed on the butt joint surface of material 1. At the same time, five grooves of corresponding shapes are milled on the corresponding Al alloy target holder 3, the corresponding height H between the boss and the groove is 3 mm, and the inclination angle α between the contact side and the horizontal plane is 65°.

[0025] Clean the processed surfaces of the target material 1 and the target support 3. First degrease with acetone, wash with pure water, ...

Embodiment 2

[0029] The combination of high-purity Ti target material and oxygen-free copper target holder is often used to prepare one of the film materials for the barrier layer of integrated circuits, and its structure is the same as that of Embodiment 1. During production, the target 1 and the target holder 3 are respectively processed with a milling machine, and 6 inverted trapezoidal bosses are processed on the butt joint surface of the high-purity Ti target. At the same time, for the oxygen-free copper target holder, 6 grooves are milled correspondingly, the height H is 5mm, and the inclination angle α is 80°.

[0030] The processed surfaces of the target material 1 and the target support 3 are cleaned with acetone, nitric acid solution, pure water, etc., and then dried with hot air. The target holder 3 is heated to 250°C, and 0.3mm of Sn-Cu alloy brazing material 2 is coated on the surface of the target holder 3, and its liquidus temperature is about 200°C.

[0031] The target mat...

Embodiment 3

[0033] The high-purity Ti-W alloy target and the brass target-support joint are another material commonly used in the preparation of barrier films for integrated circuits, and their structure is the same as in Example 2. During manufacture, the target 1 and the target holder 3 are respectively processed with a milling machine, and three inverted trapezoidal bosses are processed on the butt joint surface of the Ti-W alloy target. At the same time, three grooves are correspondingly milled out for the brass target holder 3, the height H is 2 mm, and the inclination angle α is 70°.

[0034] The processed surfaces of the target material 1 and the target support 3 are cleaned with acetone, nitric acid solution, pure water, etc., and then dried with hot air. The target holder 3 is heated to 230°C, and 0.5mm of Sn-Ag-Cu alloy brazing material 2 is coated on the surface of the target holder 3, and its liquidus temperature is about 220°C.

[0035] The target material 1 is gradually squ...

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Abstract

The invention relates to the connecting method of a metallic target and a target holder, essentially comprising the steps of connecting surface processing, brazing material coating and jointing, squeezing, bonding, etc. The target and the target holder are matched through corresponding boss and groove; when the target holder is heated to a temperature higher than the liquidus of the brazing material by 10 DEG C to 50 DEG C, the brazing material is coated at the combined face of the target and the target holder, and a pressure is forced at an axial direction, thus leading the target and the target holder to be matched closely; meanwhile, in the process of squeezing, all parts at the combined face are filled with the brazing material in a target holder groove, thus the rudimental air is exhausted. The steady connection between the target and the target holder can be realized in atmospheric environment by the method and the structure property and dimension of the target are not affected, thus the deformation problems in vacuum, high temperature, high pressure or other environments are avoided.

Description

technical field [0001] The invention relates to a connection technology between a metal target and a target holder, and is applied to the connection between a sputtering target and a target holder for thin film preparation in microelectronic integrated circuits, optical (magnetic) recording media, flat panel displays and other fields. Background technique [0002] Sputtered thin film materials are widely used in related industries such as electronic information, storage records, and displays. At the same time, with the development of these industries, the demand for sputtering targets is also increasing year by year. The quality of the target has an important influence on the performance of the sputtering film, especially the preparation of semiconductor integrated circuit chips is developing towards a large size (8-12 inches), and the size of the sputtering target and the sputtering power will also increase accordingly. Larger, the requirements for sputtering target purity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14
Inventor 郭力山何金江江轩王彬杨永刚廖赞杨亚卓王欣平孙秀霞
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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