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Technique for preparing Li doping ZnO ceramic target material

A preparation process and ceramic target material technology, which is applied in the field of Li-doped ZnO ceramic target material preparation process, and can solve the problems of easy agglomeration, uneven doping, and low purity of the target material

Inactive Publication Date: 2010-08-11
UNIV OF SCI & TECH BEIJING
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  • Application Information

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Problems solved by technology

This method prepares targets with low purity, uneven doping, easy agglomeration, and difficult formation of acceptor doping.

Method used

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  • Technique for preparing Li doping ZnO ceramic target material
  • Technique for preparing Li doping ZnO ceramic target material
  • Technique for preparing Li doping ZnO ceramic target material

Examples

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Embodiment Construction

[0014] Mix zinc nitrate, lithium nitrate, urea and glycine evenly in a molar ratio of 25:1:30:10 and put them into a beaker, inject deionized water and stir evenly until the solution is transparent without sediment, pour the solution into the evaporation Put it in a dish and heat it on a horse boiling furnace. The solution is in the form of a gel, and it should be placed violently until it burns to form a Li-doped ZnO powder. Put Li-doped ZnO powder in a corundum bowl and grind for 30min, then put it into a spark plasma sintering furnace, pre-press to 30MPa, when the vacuum degree reaches 7Pa, start heating up, the heating rate is 100℃ / min, until the temperature is When the temperature is 900°C, add an axial pressure of 30MPa. When the temperature is 1000°C, keep it warm for 3 minutes. After the heat preservation is over, release the pressure quickly, and cool naturally to room temperature and take it out.

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Abstract

The invention relates to a preparation technique of ceramic target with Li doped with ZnO, which pertains to the preparation technical field of ceramic target material. The process is that: zinc nitrate, lithium nitrate, urea and glycine are fully mixed then put into a beaker; the obtained material is added with deionized water, and is stirred, so as to lead the material to be fully melt; the melted solution is heated and sent into an evaporator, leading combustion reaction to be occurred and synthesizing Li doped with ZnO powder body; the powder body is grinded, then is sintered in a discharging plasma sintering furnace; the obtained product is the Li doped with ZnO ceramic target. The invention has the advantages of raw material being easy to be obtained, short process period, high purity and being evenly doped; in addition, acceptor doping is realized for the element Li used for substituting for Zn in lattice ZnO, and the using of the ceramic target is in favor of the preparation of Li doped with a P-typed ZnO film.

Description

technical field [0001] The invention belongs to the technical field of ceramic target material preparation, and in particular provides a Li-doped ZnO ceramic target material preparation process. The target material prepared by the method lays a foundation for the preparation of p-type ZnO thin films. Background technique [0002] ZnO is a new type II-VII wide-bandgap semiconductor compound, which has the advantages of high exciton binding energy, low epitaxial growth temperature, non-toxicity, and near-ultraviolet laser emission. It is expected to develop near-ultraviolet light-emitting diodes, lasers, etc. A light emitting device. ZnO film itself is a polar semiconductor, and undoped ZnO exhibits n-type conductivity, so the key to the application of ZnO in optoelectronics is to realize a stable and efficient p-type ZnO film. At present, the method of preparing p-type ZnO thin films is mainly to replace the position of Zn in ZnO with group I (Li, Na, K) and replace the posi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 张跃唐立丹刘邦武
Owner UNIV OF SCI & TECH BEIJING
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