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Oxide p-i-n junction device and method for producing the same

A technology of oxide and junction devices, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems that the characteristics of oxide materials cannot be fully utilized, and achieve diversification, simple preparation methods, and easy structures Effect

Inactive Publication Date: 2008-06-11
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Just synthesizing oxide materials into diode devices without making requirements on the properties of the materials does not give full play to the characteristics of the oxide materials themselves.

Method used

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  • Oxide p-i-n junction device and method for producing the same
  • Oxide p-i-n junction device and method for producing the same
  • Oxide p-i-n junction device and method for producing the same

Examples

Experimental program
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Embodiment 1

[0053] Figures 1A-1B A schematic oblique view and a side view of an embodiment of an all-metallic oxide p-i-n junction device fabricated according to the present invention are shown.

[0054] The oxide heterojunction device of this embodiment includes an STO substrate 4, a p-type oxide layer 3 formed on the STO substrate 4, to provide hole-type carriers, and a p-type oxide layer formed above the p-type oxide layer n-type oxide layer 1, to provide electron carriers, ferroelectric barrier layer 2 sandwiched between the p-type oxide layer 3 and the n-type oxide layer 1; the ferroelectric The barrier layer 2 is an oxide ferroelectric material Ba 1-e Sr e TiO 3 , the p-type oxide layer 3 is La 1-y Sr y MnO 3 , the n-type oxide layer 1 is La 2-a Ce a CuO 4 . The n-type oxide layer and the ferroelectric barrier layer are etched to 1 / 3 to 2 / 3 of the area by ion etching, and formed on the p-type oxide layer 3 and the n-type oxide layer 1 respectively A p-type oxide layer nob...

Embodiment 2

[0069] 5. After completing steps 1 to 4 in Example 1, apply a uniform layer of photoresist on the surface of the multilayer film using a coater. A photoresist mask was prepared on the multilayer film by using a glass-based mask.

[0070] 6. Using DC magnetron sputtering equipment, in the mode of DC sputtering, a layer of precious metal Ag is plated on the multilayer film.

[0071] 7. Clean the Ag-plated multilayer film with acetone. The photoresist and the Ag on the part of the photoresist mask pattern will be washed off by the acetone solution, and there is no photoresist mask. Ag will remain as pad.

[0072] 8. Using indium as the solder, solder the conductive leads to the solder pads at the terminals of the p-type oxide layer and the n-type oxide layer respectively.

Embodiment 3

[0074] 1. First, in the vacuum coating equipment, adjust the temperature to 680°C, and the vacuum degree of the back and bottom to be 5×10 -5 Pa; in a pure oxygen environment with a deposition pressure of 30Pa, use SrTiO 3 , MgO or LaAlO 3 as the substrate, on which the p-type metallic perovskite manganese oxide La 1-y Sr y MnO 3 , the La 1-y Sr y MnO 3 Layer thickness 200nm, ferroelectric oxide Ba 1-e Sr e TiO 3 Barrier layer 50nm and electronic oxide La 2-x Ce x CuO 4 n-type layer 200nm, made of multi-layer film;

[0075] Other steps are the same as the 2nd, 3rd, 4th, 5th, 6th steps among the embodiment 1.

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Abstract

The invention relates to an oxide p-i-n junction device and a method for preparation the same, wherein the device comprises a substrate, a p-type oxide layer formed on the substrate, an n-type oxide layer formed on the p-type oxide layer, leading-out ends respectively formed on the p-type oxide layer and the n-type oxide layer to be connected with lead wires, and a ferroelectrics potential barrier layer arranged between the p-type oxide layer and the n-type oxide layer; the n-type oxide layer and the ferroelectrics potential barrier layer, which are arranged at one side of the p-type oxide layer, occupy one third to two thirds of the area of the p-type oxide layer with the other part used as the leading-out end of the p-type oxide layer; the surface of the n-type oxide layer is used as the leading-out end of the n-type oxide layer; the leading-out ends of the p-type oxide layer and the n-type oxide layer are respectively provided with precious metal bonding pads used to be connected with the lead wires; moreover, both the p-type oxide layer and the n-type oxide layer are metallic. With a simple preparation method and an easily realized structure, the device realizes diversified functions of a single device.

Description

technical field [0001] The invention relates to an oxide p-i-n junction device and a preparation method thereof, more particularly to an all-metal oxide p-i-n junction device and a preparation method thereof. Background technique [0002] The traditional semiconductor p-n junction is widely used in the semiconductor electronics industry as a basic element in semiconductor integrated circuits. Common semiconductor materials such as silicon and germanium have very weak intrinsic crystal conductivity, and by introducing impurity elements in different valence states, the semiconductor crystal becomes an n-type semiconductor with electrons as the main carrier or holes as the main carrier. flow of p-type semiconductors. Combine suitable p-type and n-type semiconductors together, the carriers between p-type semiconductors and n-type semiconductors diffuse each other due to the difference in electron concentration, and near the interface where the two semiconductors contact each ot...

Claims

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Application Information

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IPC IPC(8): H01L29/868H01L29/82H01L21/329
Inventor 赵柏儒袁洁吴昊曹立新许波赵力金魁朱北沂
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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