Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate

Abstract

A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in a range of from 500 DEG C to 1050 DEG C with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.

Description

[0001] Cross References to Related Applications [0002] This application is based on an application filed under 35 U.S.C. §111(a) pursuant to 35 U.S.C. §119(e)(1), claiming Provisional Application No. 60 filed June 23, 2005 under 35 U.S.C. §111(b) / 693,095 and priority of Japanese Patent Application No. 2005-173209 filed June 14, 2005. technical field [0003] The present invention relates to a method of manufacturing a silicon carbide layer on the surface of a silicon substrate, a gallium nitride semiconductor device formed on the silicon carbide layer, and a silicon substrate including the silicon carbide layer. Background technique [0004] As a technical method of forming silicon carbide (SiC) on the surface of a silicon substrate, a chemical vapor deposition (CVD) method using a saturated aliphatic hydrocarbon and a homologue of silicon tetrachloride as raw materials is known. For example, a propane (C 3 h 8 ) and trichlorosilane (SiHCl 3 ) as a raw material to gro...

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Problems solved by technology

However, according to the prior art, as described above, it is impossible to reliably form a silicon carbide layer uniformly covering the entire surface of a silicon substrate.

For this reason, when it is intended to form a GaN layer using a silicon carbide layer having excellent lattice matching as an underlying layer, the silicon carbide layer cannot constitute an underlying layer on which a Group III nitride semiconductor layer having uniform crystallographic properties can be formed.

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