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Method for preparing transparent conductive oxide thin film with P-type delafossite structure

An oxide thin film, transparent and conductive technology, applied in metal material coating process, coating, etc., can solve the problems of large energy consumption, achieve the effect of reduced production cost, simple preparation process, and easy large-scale industrial production

Inactive Publication Date: 2008-07-09
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of thin films by the PLD method requires pre-prepared targets. In the traditional method, CuCrO is prepared by high-temperature solid-state reaction method. 2 The target needs to be sintered at a relatively high temperature (~1100°C) for a long time to ensure sufficient reaction, and the energy loss is very large

Method used

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  • Method for preparing transparent conductive oxide thin film with P-type delafossite structure
  • Method for preparing transparent conductive oxide thin film with P-type delafossite structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1: complete the preparation according to the following steps:

[0020] (a) According to the molar ratio of copper and chromium as 1:1, after weighing cuprous oxide and chromium oxide, mix them in a ball mill pot and grind them on a planetary ball mill, wherein the ball-to-material ratio is 25:1 , the rotating speed of the ball mill is 200rpm, and the time is 10 hours.

[0021] (b) placing the ball-milled powder in a mold of a desired shape for uniaxial pressing to obtain a target material for deposition.

[0022] (c) Put the prepared target into the deposition chamber, through pulsed laser sputtering, in the Al 2 o 3 Deposit CuCrO on the substrate according to the parameters shown in Table 1 2 film. Thereby making the massive delafossite structure CuCrO as shown in Fig. 1 and Fig. 2, Fig. 3, middle curve 2 film.

[0023] In Fig. 3, it can be concluded by fitting that the thin film is a direct bandgap semiconductor with an optical bandwidth of 3.23eV.

Embodiment 2

[0024] Embodiment 2: complete the preparation according to the following steps:

[0025] (a) According to the molar ratio of copper, chromium and magnesium is 1: (1-0.95): (0-0.05), after weighing cuprous oxide, chromium oxide and magnesium oxide, mix them in a ball mill jar Grinding on a ball mill,

[0026] Wherein, the ball-to-material ratio is 20:1, the rotational speed of the ball mill is 450 rpm, and the time is 25 hours.

[0027] (b) placing the ball-milled powder in a mold of a desired shape for uniaxial pressing to obtain a target material for deposition.

[0028] (c) Put the prepared target into the deposition chamber, through pulsed laser sputtering, in the Al 2 o 3 Deposited on the substrate according to the parameters shown in Table 1, thus the delafossite structure CuCr 1-x Mg x o 2 (0≤x≤0.05) films.

Embodiment 3

[0029] Embodiment 3: complete the preparation according to the following steps:

[0030] (a) According to the molar ratio of copper, chromium and calcium is 1: (1 ~ 0.97): (0 ~ 0.03), after weighing cuprous oxide, chromium oxide and calcium oxide, mix them in a ball mill jar Grinding on a type ball mill, wherein the ball-to-material ratio is 30:1, the rotating speed of the ball mill is 400 rpm, and the time is 15 hours.

[0031] (b) placing the ball-milled powder in a mold of a desired shape for uniaxial pressing to obtain a target material for deposition.

[0032] (c) Put the prepared target into the deposition chamber, through pulsed laser sputtering, in the Al 2 o 3 Deposited on the substrate according to the parameters shown in Table 1, thus the delafossite structure CuCr 1-x Ca x o 2 (0≤x≤0.03) films.

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Abstract

The invention discloses a method for preparing a P-type delafossite structure transparent conductive oxide film, first cuprous oxide, chromium oxide and oxide of metal M are weighted according to the molar ratio of cuprum, chromium and M, which is 1: (0.75-1) : (0-0.25), after being mixed, raw materials are milled, then power which is milled is compacted to be prepared into compound target, which is prepared in normal temperature and is not sintered in high temperature, and the cuprous oxide, the cuprous oxide and the oxide of the metal M do not produce a chemical reaction. The obtained target is deposited on a base plate with a CuCr1-xMxO2 film through pulsed laser deposition, and the x is equal or greater than 0 and is equal or lesser than 0.25. The prepared delafossite structure polycystic CuCr1-xMxO2 film (0<=x<=0.25) has high conductivity and visible light transmittance, and laboratory results have reproducibility.

Description

technical field [0001] The invention relates to the preparation of a delafossite structure p-type transparent conductive oxide (Transparent ConductingOxide, TCO) thin film, especially CuCr 1-x m x o 2 (0≤x≤0.25, M is a metal cation Mg, Ca, Ni, etc.) film preparation method by pulsed laser deposition (Pulsed Laser Deposition, PLD). Background technique [0002] Transparent conductive oxide films are used in a wide variety of applications, from transparent electrodes for flat panel displays to low-E architectural glass coatings. TCO materials that are currently studied include ZnO, In 1-x sn x o 3 (ITO), SnO 2 :F, Cd 2 SnO 4 etc., where ITO and SnO 2 The development is relatively mature, but they are all n-TCO. Although the p-TCO thin film can be prepared through a certain process in ZnO and other systems, the process is complex and the stability needs to be further improved. It is of great significance to prepare p-TCO thin film materials with superior performance ...

Claims

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Application Information

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IPC IPC(8): C23C24/10
Inventor 李达方晓东邓赞红陶汝华董伟伟
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI