Multi-field coupling experimental method and device based on analog IC service condition

A technology of experimental methods and conditions, applied in electronic circuit testing and other directions, can solve problems such as film failure, and achieve the effect of eliminating oxidation, uniform electric field strength, and improving mechanical properties

Inactive Publication Date: 2008-07-16
NANJING UNIV
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no report on the diffusion of atoms and the formation and accumulation of holes caused by the structu

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-field coupling experimental method and device based on analog IC service condition
  • Multi-field coupling experimental method and device based on analog IC service condition
  • Multi-field coupling experimental method and device based on analog IC service condition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The main components of the multi-field coupling annealing equipment are a stainless steel vacuum chamber, three copper electrode plates, a stabilized power supply, a heater, a mechanical pump and a molecular pump. The vacuum chamber 1 is provided with a heater assembly 2, and the vacuum chamber communicates with the vacuum device formed by the gate valve 3 and the molecular pump 4 and the mechanical pump 8. The water cooling tower 5 is an accessory of the molecular pump. The vacuum chamber 1, the heating and pump and the high pressure The control cabinet of the DC power supply is installed on the stand 6, and a vacuum chamber is installed on the support plate 13. A heater assembly and an electric field support rod 15 are arranged inside the vacuum chamber, and several ceramic pad support plates 13 are fixed on the electric field support rod, and the support plate 13 is installed on the plate. A plurality of parallel copper plates 12 are provided with columns 14, and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a multi-field coupling device which is based on the simulated conditions of real active servicing of IC, and consists of a main workroom, a slide valve, a molecular pump, a mechanical pump, a high-voltage DC power source, a control cabinet, a heater component, a copperplate, a supporting rod of an electric field and a supporting board with a ceramic gasket, and the heater component is arranged on the back part of the copperplate. The invention implements the coupling of the electric field and a temperature field in high vacuum and the largest electric field intensity can achieve 2000 volts per centimeter, the highest temperature is 800 DEG C, the vacuum can achieve 3.0 multiplied by 10 minus 4 Pa. The invention provides the working condition simulation of IC active servicing, and by coupling the electric field and the temperature field in high vacuum, the invention implements a processing experiment of inside conducting wire of metallic Cu which is important in IC under the multi-field coupling, thus veritably reflecting the changes of the microstructure characteristics and the failure mechanism of the working Cu wire, and providing great valuable experiment data for evaluating the service life of microelectronic elements. The device of the invention has simplicity, convenient operation and good implementation effects.

Description

technical field [0001] The invention provides a multi-field coupling device for simulating real service conditions of ICs, through the coupling and regulation of the temperature field and the electric field, so as to study the influence of the temperature field and the electric field on the microstructure evolution and failure mode of the metal thin film. Background technique [0002] Microelectronics and microdevices are the key development fields in the 21st century at home and abroad. With the development of ultra-deep submicron processing technology, ultra-large-scale integrated circuits (SLSI) are developing towards higher integration and miniaturization. At present, the line width representing the characteristic size of integrated circuits (IC) has reached 65nm. According to the development of Moore's law, the line width of microelectronic devices will be reduced to below 50nm. As the line width decreases, especially when the line width enters the nanometer scale, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R31/28
Inventor 孟祥康操振华李平云刘澎徐春陆海鸣
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap