Multi-field coupling experimental method and device based on analog IC service condition

Abstract

The invention discloses a multi-field coupling device which is based on the simulated conditions of real active servicing of IC, and consists of a main workroom, a slide valve, a molecular pump, a mechanical pump, a high-voltage DC power source, a control cabinet, a heater component, a copperplate, a supporting rod of an electric field and a supporting board with a ceramic gasket, and the heater component is arranged on the back part of the copperplate. The invention implements the coupling of the electric field and a temperature field in high vacuum and the largest electric field intensity can achieve 2000 volts per centimeter, the highest temperature is 800 DEG C, the vacuum can achieve 3.0 multiplied by 10 minus 4 Pa. The invention provides the working condition simulation of IC active servicing, and by coupling the electric field and the temperature field in high vacuum, the invention implements a processing experiment of inside conducting wire of metallic Cu which is important in IC under the multi-field coupling, thus veritably reflecting the changes of the microstructure characteristics and the failure mechanism of the working Cu wire, and providing great valuable experiment data for evaluating the service life of microelectronic elements. The device of the invention has simplicity, convenient operation and good implementation effects.

Description

technical field [0001] The invention provides a multi-field coupling device for simulating real service conditions of ICs, through the coupling and regulation of the temperature field and the electric field, so as to study the influence of the temperature field and the electric field on the microstructure evolution and failure mode of the metal thin film. Background technique [0002] Microelectronics and microdevices are the key development fields in the 21st century at home and abroad. With the development of ultra-deep submicron processing technology, ultra-large-scale integrated circuits (SLSI) are developing towards higher integration and miniaturization. At present, the line width representing the characteristic size of integrated circuits (IC) has reached 65nm. According to the development of Moore's law, the line width of microelectronic devices will be reduced to below 50nm. As the line width decreases, especially when the line width enters the nanometer scale, the...

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Problems solved by technology

However, there is no report on the diffusion of atoms and the formation and accumulation of holes caused by the structure change of the mesoscale metal film after annealing under the electric field, which leads to the failure of the film.

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