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Method for preparing organic molecule device of crossing structure

A molecular device and organic technology, applied in the field of the preparation of cross-structured organic molecular devices, can solve the problems of large feature size, low integration, limited yield, etc., and achieve the effects of small feature size, large depth of focus, and short wavelength.

Active Publication Date: 2008-07-30
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of wavelength, optical lithography has large feature size and low integration; while the yield of nanoimprinting method is limited

Method used

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  • Method for preparing organic molecule device of crossing structure
  • Method for preparing organic molecule device of crossing structure
  • Method for preparing organic molecule device of crossing structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0045] As shown in Figure 2, Figure 2 is a process flow chart for preparing a cross-structure organic molecular device according to an embodiment of the present invention, the method includes the following steps:

[0046] 1. If Figure 2-1 As shown, a dielectric film 202 is deposited on the surface of a substrate 201, and the dielectric film 202 is obtained by chemical vapor deposition or oxidation.

[0047] 2. If Figure 2-2 As shown, the PMMA resist 203 is spin-coated on the surface of the film 202, and pre-baked with a hot plate or an oven.

[0048] 3. If Figure 2-3 As shown, the resist lower electrode pattern 204 is obtained after X-ray lithography and development.

[0049] 4. If Figure 2-4 As shown, the metal 205 is electron beam evaporated, and the bottom electrode metal is chromium / gold.

[0050] 5. If Figure 2-5 As shown, the lower electrode 206 is obtained by ultrasonic peeling with acetone, ethanol, and deionized water.

[0051] 6. If Figure 2-6 As shown,...

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PUM

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Abstract

The invention relates to the field of fine processing technology in microelectronics and molecular electronics and discloses a method for manufacturing a crossed organic molecular device. The method comprises following steps: A depositing a dielectric film on a substrate surface; B spin-coating a corrosion resistant on the surface of the dielectric film, and etching and developing with X-rays to obtain an electrode pattern on the corrosion resistant; C depositing metal and stripping to obtain a lower electrode metal pattern; D growing an organic molecular film; E deposing an upper electrode metal material; F spin-coating the corrosion resistant and etching and developing with the X-rays to obtain an upper electrode patter; G etching by using the corrosion resistant as a mask to obtain an upper electrode; and H removing corrosion resistant to achieve the manufacture of the crossed organic molecular device. The invention can effectively improve the manufacture of the crossed organic molecular device.

Description

technical field [0001] The invention relates to the technical field of microfabrication in microelectronics and molecular electronics, in particular to a method for preparing cross-structure organic molecular devices by using X-ray photolithography technology. Background technique [0002] As the feature size of large-scale integrated circuits enters the nanometer level, the traditional silicon-based integrated circuit technology is facing challenges, and the research on new materials and new structures has become a hot spot. Molecular electronic devices, one of the branches of nanoelectronics, are booming. [0003] FET and crossover are currently the main structures of molecular electronic devices, and the crossover structure is beneficial to integration and has attracted extensive attention. [0004] The current manufacturing process of the cross structure is generally prepared by optical lithography or nanoimprinting. Due to the limitation of wavelength, optical lithogra...

Claims

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Application Information

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IPC IPC(8): H01L51/00H01L51/40H01L51/48H01L51/56
CPCY02E10/549
Inventor 涂德钰刘明谢常青朱效力贾锐
Owner SEMICON MFG INT (SHANGHAI) CORP
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