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Plasma processing apparatus

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as inability to perform uniform processing

Inactive Publication Date: 2008-08-13
TOHOKU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] The problem to be solved by the present invention is the problem that uniform processing cannot be performed when the area of ​​the substrate to be processed increases.

Method used

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Embodiment 1

[0041] FIG. 1 is a cross-sectional view showing a first embodiment of the plasma processing apparatus of the present invention. FIG. 2 is a sectional view along A-A in FIG. 1 , and FIG. 3 is a sectional view along B-B in FIG. 1 .

[0042] The vacuum container 101 is made of aluminum, for example, and is grounded. Inside the vacuum vessel 101 , a substrate 107 and a substrate mounting table 108 are provided. The substrate 107 is, for example, a glass substrate. Bellows 109 are provided between the mounting table 108 and the vacuum vessel 101 , and the mounting table 108 can be raised and lowered while maintaining the airtight state by a lifting mechanism not shown. A lower portion of the vacuum container 101 is provided with an exhaust port 110 for exhausting gas inside the vacuum container 101 by a vacuum pump provided outside the vacuum container 101 .

[0043] The two rectangular waveguides 102 are arranged parallel to each other, that is, the H plane (the wide wall surfa...

Embodiment 2

[0085] Fig. 9 is a cross-sectional view showing a second embodiment of the plasma processing apparatus of the present invention. Here, only the points of difference from the first embodiment will be described.

[0086] On the surface of the waveguide 102 on the mounting table 108 side, a rectangular parallelepiped dielectric plate 104 is arranged for each slit 103 . Furthermore, a structure may be adopted in which the dielectric plates 104 are arranged across the plurality of waveguides 102 .

[0087] A waveguide inner dielectric 201 is provided inside the waveguide 102 . The dielectric body 201 in the waveguide is made of a fluororesin with a specific permittivity of 2.1, but may be quartz, mullite, alumina, sapphire, yttrium oxide, aluminum nitride, silicon nitride, or the like. In this way, when a dielectric is inserted into the waveguide, the cross-sectional size of the waveguide and the wavelength λg inside the waveguide are reduced. If the specific permittivity of the...

Embodiment 3

[0095] Fig. 11 is a cross-sectional view showing a third embodiment of the plasma processing apparatus of the present invention. Fig. 12 is a sectional view of A-A in Fig. 11 . Here, only the points of difference from the first embodiment will be described.

[0096] A single rectangular waveguide 301 is arranged such that the E plane (narrow wall surface of the rectangular waveguide) is parallel to the substrate 107 . One end of the waveguide 301 is a short-circuit surface, and the other end is connected to the microwave supply system 113 . In this embodiment, since elongated plasma can be generated, it is suitable for plasma processing of elongated members and plasma processing while moving a large-area substrate in a direction perpendicular to the waveguide axis.

[0097] A plurality of slits 103 are opened at equal intervals on the surface of the waveguide 301 on the side of the mounting table 108 . On the surface of the waveguide 301 on the side of the mounting table, a...

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Abstract

Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes (102) to dielectric plates (104) through slots (103), and performs plasma processing to the surface of the substrate (107) by converting a gas supplied into a vacuum container (101) into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes (102) are arranged in parallel, a plurality of dielectric plates (104) are arranged for waveguide tubes (102), respectively, and partitioning members (106) formed of a conductor and grounded are arranged between the adjacent dielectric plates (104). The in-tube wavelength of the waveguide tube (102) is adjusted to be an optimum value by vertically moving a plunger (111). Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, form forming, cleaning, ashing, can be performed.

Description

technical field [0001] The present invention relates to a plasma processing device, in particular to a plasma processing device capable of uniformly processing large-area substrates. Background technique [0002] The plasma treatment method refers to plasmaizing a specific gas to generate highly active ions and radicals (radicals), and using the ions and radicals to perform etching, film formation, cleaning, Processing methods such as ashing. The plasma processing device refers to a device for performing a plasma processing method. The energy for plasmaizing gas is mostly provided by electromagnetic waves. In the manufacturing process of semiconductors, solar cells, flat panel displays, etc., a parallel plate plasma processing device or an inductively coupled plasma processing device using a high frequency from several MHz to several 10 MHz is used as energy for plasmating gas medium. Known is an electron cyclotron resonance plasma device that utilizes a microwave of 2.4...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46C23C16/511
CPCH05H1/46H01J37/32192C23C16/511H05H1/24H01L21/0262
Inventor 大见忠弘平山昌树
Owner TOHOKU UNIV
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