Nanocrystalline silicon forming method

Abstract

The invention relates to the forming of a nanocrystalline silicon thin film without an amorphous latency layer, which consists of two plasma enhanced chemical vapor deposition stages, namely a dynamic equilibrium hydrogen ion etching preparation stage and a real growing stage thereafter. In a first etching stage, a moulding board which is composed of pint-sized seed crystals (crystal nucleus) forms on the surface based on the silicon thin film; in order not to form amorphous material and miscible thin film at the initial period of the growing stage, nanocrystalline silicon is immediately formed for preparation. The nanocrystalline silicon with an obvious abrupt interface is extremely important for the good transfer efficiency of a thin film silicon solar battery.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic power generation materials, in particular to the vacuum deposition technology of nanocrystalline silicon thin films. Background technique [0002] In recent years, the development of photovoltaic cells and large-area photovoltaic templates (modules) has attracted widespread attention in the world. Hydrogenated amorphous silicon and nanocrystalline silicon, in particular, have shown great potential with the widespread adoption of photovoltaic devices in commercial and residential installations. A notable feature of producing thin-film silicon photovoltaic devices at such a low temperature below 260°C is that the large-area deposited silicon-related semiconductor film layers and electrical contact film layers have excellent performance. At the same time, using well-established coating equipment and procedures, low-cost stencils can be produced industrially. The laser patterning process of differe...

AI Technical Summary

Problems solved by technology

The traditional method of continuously generating hydrogenated silicon to generate nanocrystalline silicon inevitably leads to the formation of an amorphous silicon conversion layer at the initial stage of hydrogenated silicon formation, severely compromising the performance of nanocrystalline silicon thin film devices requiring minimal transition or conversion materials

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