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Sputtering target, transparent conductive film and transparent electrode

A transparent conductive film and transparent electrode technology, applied in the field of sputtering targets, can solve problems such as the crystallization temperature or work function change of the transparent conductive film

Active Publication Date: 2008-09-03
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the method of Patent Document 7, the crystallization temperature and the work function of the transparent conductive film may change due to the addition of lanthanoids.

Method used

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  • Sputtering target, transparent conductive film and transparent electrode
  • Sputtering target, transparent conductive film and transparent electrode
  • Sputtering target, transparent conductive film and transparent electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0456] (1) Manufacture and evaluation of sputtering target

[0457] (i) Manufacturing of target

[0458]As the raw material for target production, indium oxide with an average particle size of 3.4 μm and a purity of 4N, zinc oxide with a purity of 0.6 μm and a purity of 4N, and tin oxide with a purity of 0.5 μm and a purity of 4N were mixed so that the atomic ratio [In / (In+Sn+Zn)] 0.53, the atomic ratio [Sn / (In+Sn+Zn)] is 0.17, and the atomic ratio [Zn / (In+Sn+Zn)] is 0.30, it is supplied to a wet ball mill, mixed and pulverized for 72 hours, and the raw material is obtained micro powder.

[0459] After granulating the obtained raw material fine powder, press-form it into a size with a diameter of 10 cm and a thickness of 5 mm, put it into a firing furnace, and burn it under oxygen pressure at 1400 ° C for 48 hours , to obtain a sintered body (target). The rate of temperature rise during firing was 3° C. / min.

[0460] (ii) Target evaluation

[0461] For the obtained target...

Embodiment 2～5、 and comparative example 1～7

[0504] Table 1 shows the results of producing and evaluating targets in the same manner as in Example 1, except that the compounding ratio of metal oxides as raw materials was changed to the atomic ratio shown in Table 1. Graphs of X-ray diffraction on the targets obtained in Examples 3 and 4 are shown in FIGS. 2 and 3 .

[0505] In addition, an electron beam microanalyzer (EPMA) image measured in the same manner as in Example 1 for the sintered body obtained in Comparative Example 1 is shown in FIG. 6 .

[0506] In addition, in Comparative Examples 2, 4, and 5, since the discharge may become unstable during DC sputtering, RF sputtering was performed.

[0507] [Table 1]

[0508]

[0509] As can be seen from the results in Table 1, together with Zn 2 SnO 4 The spinel structure compound represented by In 2 o 3 The target of the indicated beryl structure compound has high theoretical relative density, low bulk resistance and high bending resistance.

[0510] In addition,...

Embodiment 6

[0512] (1) Manufacture of sputtering target

[0513] As raw materials, indium oxide with a purity of 4N and an average particle size of 2 μm, zinc oxide with a purity of 4N and 0.6 μm, and tin oxide with a purity of 4N and 0.5 μm were mixed so that the atomic ratio [In / (In+Sn+Zn)] was 0.64, The atomic ratio [Sn / (In+Sn+Zn)] was 0.18, and the atomic ratio [Zn / (In+Sn+Zn)] was 0.18, which were supplied to a wet ball mill, mixed and pulverized for 20 hours, and the raw material fine powder was obtained.

[0514]After granulating the obtained raw material fine powder, press-form it into a size with a diameter of 10 cm and a thickness of 5 mm, put it into a sintering furnace, and burn it at 1400 ° C for 48 hours under oxygen pressure to obtain Sintered body (target). The rate of temperature increase during firing was 180° C. / minute, and the rate of temperature decrease was 60° C. / hour.

[0515] (ii) Target evaluation

[0516] The obtained target was measured for density, bulk resi...

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Abstract

Disclosed is a sputtering target which is characterized by being a sintered body of an oxide which contains at least indium, tin and zinc and includes a spinel structure compound expressed as Zn2SnO4 and a bixbite structure compound expressed as In2O3. Also disclosed is a sputtering target which is characterized in that it contains indium, tin, zinc and oxygen and only a peak ascribed to a bixbite structure compound is practically observed by x-ray diffraction (XRD).

Description

technical field [0001] The present invention relates to a sputtering target produced by sintering (hereinafter, may be simply referred to as a sputtering target or a target), and a method for producing a sputtering target. Moreover, this invention relates to the transparent conductive film and transparent electrode obtained using a sputtering target. Background technique [0002] In recent years, the development of display devices has been remarkable, and liquid crystal display devices (LCD) or electroluminescent display devices (EL) or field emission displays (FED) have been used as office equipment such as personal computers or word processors, or in factories. The control system is used with a display device. Also, these display devices all have a sandwich structure in which display elements are sandwiched between transparent conductive oxides. [0003] As such a transparent conductive oxide, as described in Non-Patent Document 1, indium tin oxide (hereinafter, sometime...

Claims

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Application Information

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IPC IPC(8): C23C14/34C04B35/00H01B5/14
Inventor 矢野公规井上一吉田中信夫海上晓梅野聪
Owner IDEMITSU KOSAN CO LTD
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