Nitride based semiconductor light emitting element and its fabrication process
A nitride-based, light-emitting element technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low thermal conductivity of sapphire substrates, heating of components, and inability to spread heat, etc.
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Embodiment 1
[0221] In this example, the figure 1 The nitride-based semiconductor light-emitting device shown in the cross-sectional schematic diagram of .
[0222] First, a 5 μm thick Si-doped n-type GaN contact layer, a 30 nm-thick n-type In 0.1 Ga 0.9 N cladding, 30nm thick Si-doped GaN barrier layer and 2.5nm thick In 0.2 Ga 0.8 The N well layer is stacked five times, and finally, the light emitting layer with a multi-well structure provided with a barrier layer, and p-type Al doped with Mg with a thickness of 50nm are sequentially stacked. 0.07 Ga 0.93 An N-clad layer, a Mg-doped p-type GaN contact layer with a thickness of 150 nm.
[0223] Next, on the p-type semiconductor layer 105, a film containing ITO (SnO 2 : 10% by weight) of the transparent electrode 106 . Then, annealing was performed at a temperature of 300° C. for 1 hour in an oxygen atmosphere.
[0224] Next, the ohmic contact layer 107 made of a Pt layer with a thickness of 1.5 nm and the reflective layer 108 made...
Embodiment 2
[0242] In this example, the Figure 5 A nitride-based semiconductor light-emitting device as shown in the cross-sectional schematic diagram of .
[0243] First, on a sapphire substrate, a 5 μm Si-doped n-type GaN contact layer, a 30-nm-thick n-type In 0.1 Ga 0.9 N cladding, 30nm thick Si-doped GaN barrier layer and 2.5nm thick In 0.2 Ga 0.8The N well layer is stacked five times, and finally the light emitting layer with a multi-well structure with a barrier layer and Mg-doped p-type Al with a thickness of 50nm are sequentially stacked. 0.07 Ga 0.93 An N-clad layer, a Mg-doped p-type GaN contact layer with a thickness of 150 nm.
[0244] Next, on the p-type semiconductor layer 105, a film containing ITO (SnO 2 : 10% by weight) of the transparent electrode 106 . Then, annealing was performed at a temperature of 300° C. for 1 hour in an oxygen atmosphere.
[0245] Next, the ohmic contact layer 107 made of a Pt layer with a thickness of 1.5 nm and the reflective layer 108 ...
Embodiment 3
[0257] The nitride-based semiconductor light-emitting device of the present invention was obtained in the same manner as in Example 2 except that titanium dioxide sol was used instead of silicone resin as the material of the light-transmitting material layer 114 .
[0258] After coating the titanium dioxide sol, it was dried and cured by treating at 150° C. for 1 hour and at 300° C. for 3 hours. The refractive index of the titania sol at this time was 2.2.
[0259] The obtained nitride-based semiconductor light-emitting element was mounted in a TO-18 can, and the light-emitting output at an applied current of 20 mA was measured with a tester, and the light-emitting output was 22 mW.
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Abstract
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