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Piezo crystal having four-lattice structure

A piezoelectric crystal and lattice technology, applied in the field of four-lattice structure piezoelectric crystals, can solve problems such as poor frequency and temperature stability, high electromechanical coupling coefficient, etc.

Active Publication Date: 2008-10-01
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its most prominent feature is its high electromechanical coupling coefficient, which can be used as a broadband low insertion loss filter substrate, but its poor frequency and temperature stability is the biggest bottleneck restricting its application.

Method used

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  • Piezo crystal having four-lattice structure
  • Piezo crystal having four-lattice structure
  • Piezo crystal having four-lattice structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Growth of BNAS crystals by pulling method:

[0021] Raw material BaCO with a purity of 99.99% 3 , Nb 2 o 5 、Al 2 o 3 , SiO 2 Ingredients according to the following formula:

[0022] 6BaCO 3 +Nb 2 o 5 +3Al 2 o 3 +4SiO 2 = 2Ba 3 NbAl 3 Si 2 o 14 +6CO 2

[0023] Mix the raw materials thoroughly and briquette, then sinter at 1150°C for 24 hours to obtain Ba 3 NbAl 3 Si 2 o 14 polycrystalline material.

[0024] Adopt intermediate frequency induction heating pulling furnace, use iridium gold crucible, heat up to 1520°C for 2 hours to melt the sintered material, keep the temperature for 4 hours to stabilize the melt; use a-direction seed crystal, grow at 1458°C; grow at 45° The angle is placed on a slanted shoulder, and when the diameter of the crystal reaches 10mm, it turns to grow in an isodiameter, and the growth stops when the diameter reaches 20mm, and the cooling rate is 70°C per hour. During the growth process, the rotational speed was 15 rpm, and...

Embodiment 2

[0026] Growth of BTAS crystals by pulling method:

[0027] Raw material BaCO with a purity of 99.99% 3 、 Ta 2 o 5 、Al 2 o 3 , SiO 2 Ingredients according to the following formula:

[0028] 6BaCO 3 +Ta 2 o 5 +3Al 2 o 3 +4SiO 2 = 2Ba 3 TaAl 3 Si 2 o 14 +6CO 2

[0029] Mix the raw materials thoroughly and briquette, then sinter at 1150°C for 24 hours to obtain Ba 3 TaAl 3 Si 2 o 14 polycrystalline material.

[0030] Adopt intermediate frequency induction heating pulling furnace, use iridium gold crucible, heat up to 1532°C for 2 hours to melt the sintering material, keep it for 4 hours to stabilize the melt; use a-direction seed crystal, grow at 1463°C; grow at about 40 Angle of ° puts the inclined shoulder, when the crystal diameter reaches 13mm, it turns to isodiametric growth, and when the isodiametric growth reaches 20mm, the growth stops, then the crystal is lifted from the melt, cooled to room temperature at 70°C per hour, and the crystal is taken out....

Embodiment 3

[0032] Growth of STAS crystals by pulling method:

[0033] The raw material SrCO with a purity of 99.99% 3 、 Ta 2 o 5 、Al 2 o 3 , SiO 2 Ingredients according to the following formula:

[0034] 6SrCO 3 +Ta 2 o 5 +3Al 2 o 3 +4SiO 2 =2Sr 3 TaAl 3 Si 2 o 14 +6CO 2

[0035] Mix the raw materials thoroughly and briquette, then sinter at 1150°C for 24 hours to obtain Sr 3 TaAl 3 Si 2 o 14 polycrystalline material.

[0036] Using a medium frequency induction heating pull furnace, the sintered material is placed in an iridium crucible, with N 2 As a protective atmosphere, heat up to 1540°C for 2 hours to completely melt the sintered material, and keep the temperature for 4 hours to stabilize the melt; use a-direction seed crystals, and grow them at 1460°C; put the inclined shoulder at an angle of about 40°, and crystal When the diameter reaches 12mm, turn to isodiametric growth, and stop growing when the isodiametric growth reaches 20mm, then lift the crystal out...

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Abstract

The invention relates to four crystal lattice phase structural piezoelectric crystal. The chemical formula is M23NeAl3Si2O14, wherein Me is Ca, Sr or Ba, Ne is Sb, Nb or Ta. The space group is P321. The invention obtains the compound of the structure at high temperature by solid phase synthesizing method, and then generating monocrystal by crystal generation method such as a hauling method, a pot descending method and so on. The piezoelectric constant obtained e11 is more than that of lanthanum gallium silicate single crystal, which is to manufacture sound surface wave or sound body wave piezoelectric apparatus.

Description

technical field [0001] The invention relates to a four-lattice structure piezoelectric crystal, which belongs to the field of crystal materials. Background technique [0002] Surface acoustic wave devices (Surface Acoustic Waves, SAW) are the most important devices of piezoelectric crystals in electronic applications. Surface acoustic wave devices have the advantages of small size, stable performance, strong radiation resistance, large dynamic range, and the ability to realize various complex signal processing, etc., and have been widely used in the field of civil technology. In recent years, with the improvement of the semiconductor process level, the production of high-frequency surface acoustic wave devices and resonators has become possible, and the scope of application has continued to expand, covering almost all communication fields. Since the late 1980s, SAW devices have been widely used in the field of mobile communications. [0003] α-quartz crystal is an "ancient...

Claims

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Application Information

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IPC IPC(8): C30B29/34C30B15/00
Inventor 郑燕青孔海宽施尔畏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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