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Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane

A technology of gate dielectric and chemical method, which is applied in the field of preparing the above-mentioned ultra-thin HfO2 or ZrO2 gate dielectric thin film by soft chemical method, can solve the problems affecting industrial application, complicated preparation process, easy hydrolysis, etc., and achieves good application prospects and simple process , low-cost effect

Inactive Publication Date: 2008-10-22
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the general sol-gel method, the metal precursor sol generally adopts metal alkoxide, and its preparation process is complicated and unstable, easy to hydrolyze, and it is difficult to find a very suitable solvent to prepare a more uniformly dispersed and stable Sol, which affects the industrial application of this method

Method used

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  • Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane
  • Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane
  • Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) HfCl 4 Preparation of sol:

[0028] Take 0.01mol of anhydrous HfCl in a hand-held box under nitrogen atmosphere 4 Dissolve the powder in 30ml of absolute ethanol, stir to make it completely dissolved; mix 5ml of acetylacetone with 15ml of absolute ethanol, then mix the above two solutions; then take out the prepared solution from the hand box and leave it at room temperature Magnetic stirring for 4-7 hours to obtain stable HfCl with a concentration of about 0.2mol / l 4 Sol

[0029] (2) Si substrate processing:

[0030] After the single crystal silicon substrate is cleaned by standard RCA semiconductor cleaning process, it is then immersed in a diluted hydrofluoric acid solution at room temperature for 3 to 6 minutes to remove the oxide layer on the surface (the volume ratio of hydrofluoric acid to deionized water is 1 : 8); Then put the substrate into 30% (mass fraction) hydrogen peroxide at 60°C for ultrasonic treatment for 8-15 minutes;

[0031] (3) Film preparation pr...

Embodiment 2

[0038] (1) HfCl 4 Preparation of sol:

[0039] Take 0.005mol of anhydrous HfCl in a hand-held box under nitrogen atmosphere 4 Dissolve the powder in 20ml of absolute ethanol and stir to completely dissolve it; mix 3ml of acetylacetone with 17ml of absolute ethanol, then mix the above two solutions; then take out the prepared solution from the hand box and leave it at room temperature Magnetic stirring for 4-7 hours to obtain stable HfCl with a concentration of about 0.125mol / l 4 Sol

[0040] (2) Si substrate processing:

[0041] After the single crystal silicon substrate is cleaned by standard RCA semiconductor cleaning process, it is then immersed in a diluted hydrofluoric acid solution at room temperature for 3 to 6 minutes to remove the oxide layer on the surface (the volume ratio of hydrofluoric acid to deionized water is 1 : 10); Then put the substrate in 30% by weight hydrogen peroxide at 50°C and ultrasonically treat it for 8-15 minutes;

[0042] (3) Film preparation proces...

Embodiment 3

[0049] (1) HfCl 4 Preparation of sol:

[0050] Take 0.02mol of anhydrous HfCl in a hand-held box under nitrogen atmosphere 4 Dissolve the powder in 40ml of absolute ethanol and stir to dissolve it completely; mix 6ml of acetylacetone with 20ml of absolute ethanol, then mix the above two solutions; then take out the prepared solution from the hand box and leave it at room temperature Stir magnetically for 4-7 hours to obtain stable HfCl with a concentration of about 0.3mol / l 4 Sol

[0051] (2) Si substrate processing:

[0052] After the single crystal silicon substrate is cleaned by standard RCA semiconductor cleaning process, it is then immersed in a diluted hydrofluoric acid solution at room temperature for 3 to 6 minutes to remove the oxide layer on the surface (the volume ratio of hydrofluoric acid to deionized water is 1 : 8); Then put the substrate into 30% (mass fraction) hydrogen peroxide at 50°C for ultrasonic treatment for 8-15 minutes;

[0053] (3) Film preparation proce...

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Abstract

The invention discloses a soft chemical method for making an ultrathin HfO2 or ZrO2 gate dielectric membrane. The method successfully prepares HfCl4 or ZrCl4 precursor sol with better stability and evenness through a simple and feasible technological line; moreover, the sol has longer storage life; an ultrathin HfO2 or ZrO2 membrane with a leveling-off surface is made on a Si substrate through adopting the precursor sol and the soft chemical method under room temperature; and a gate dielectric membrane with excellent electrical properties is obtained through post annealing. The method has simple making process and low cost and has superiority in the micro-electronic field, thereby having important application prospects.

Description

1. Technical Field [0001] The invention relates to a preparation of ultra-thin metal oxide (HfO 2 Or ZrO 2 ) A method of gate dielectric film, specifically a method for preparing the above-mentioned ultra-thin HfO by a soft chemical method 2 Or ZrO 2 Gate dielectric film method. 2. Background technology [0002] With the rapid development of semiconductor technology, the feature size of metal-oxide-semiconductor field effect transistors (MOSFETs), which are the core devices of silicon-based microelectronics, are shrinking according to Moore's law. However, the traditional SiO 2 The gate dielectric material cannot overcome the influence of the quantum tunneling effect caused by the shrinking of the feature size of the MOSFET device. When SiO 2 When the thickness of the device is reduced to 1nm, the gate leakage current increases rapidly, which will cause the reliability of the device to deteriorate and fail to work normally. In order to further improve the integration of microelec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/288H01L21/336
Inventor 龚佑品李爱东钱旭吴迪闵乃本
Owner NANJING UNIV
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