Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane

A technology of gate dielectric and chemical method, which is applied in the field of preparing the above-mentioned ultra-thin HfO2 or ZrO2 gate dielectric thin film by soft chemical method, can solve the problems affecting industrial application, complicated preparation process, easy hydrolysis, etc., and achieves good application prospects and simple process , low-cost effect
CN101290883AInactive Publication Date: 2008-10-22NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV
Publication Date
2008-10-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a soft chemical method for making an ultrathin HfO2 or ZrO2 gate dielectric membrane. The method successfully prepares HfCl4 or ZrCl4 precursor sol with better stability and evenness through a simple and feasible technological line; moreover, the sol has longer storage life; an ultrathin HfO2 or ZrO2 membrane with a leveling-off surface is made on a Si substrate through adopting the precursor sol and the soft chemical method under room temperature; and a gate dielectric membrane with excellent electrical properties is obtained through post annealing. The method has simple making process and low cost and has superiority in the micro-electronic field, thereby having important application prospects.
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Description

1. Technical Field

[0001] The invention relates to a preparation of ultra-thin metal oxide (HfO 2 Or ZrO 2 ) A method of gate dielectric film, specifically a method for preparing the above-mentioned ultra-thin HfO by a soft chemical method 2 Or ZrO 2 Gate dielectric film method. 2. Background technology

[0002] With the rapid development of semiconductor technology, the feature size of metal-oxide-semiconductor field effect transistors (MOSFETs), which are the core devices of silicon-based microelectronics, are shrinking according to Moore's law. However, the traditional SiO 2 The gate dielectric material cannot overcome the influence of the quantum tunneling effect caused by the shrinking of the feature size of the MOSFET device. When SiO 2 When the thickness of the device is reduced to 1nm, the gate leakage current increases rapidly, which will cause the reliability of the device to deteriorate and fail to work normally. In order to further improve the integration of microelec...

Claims

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