Artificial synthetic method of high-pure SiC power for semiconductor single-crystal growth
A high-purity silicon carbide powder and artificial synthesis technology, which is applied in the field of silicon carbide powder synthesis, can solve the problems that the purity cannot reach the growth of semiconductor single crystal and the impurity content is high, and achieve the effect of improving the purity and low impurity concentration.
Active Publication Date: 2008-11-12
SICC CO LTD
0 Cites 46 Cited by
AI-Extracted Technical Summary
Problems solved by technology
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreAbstract
The invention provides a method for artificially synthesizing high-purity carborundum powder used for growing semiconductor single crystal. The method comprises the following steps of: (1) taking Si powder and C powder according to a mol ratio of 1 to 1; (2) putting the Si powder and the C powder into a crucible after the Si powder and the C powder are mixed uniformly, putting the crucible in a medium frequency induction heating furnace, vacuumizing a growth chamber of the heating furnace, and increasing the temperature to 1000 DEG C; charging high-purity argon gas, helium gas or mixture of argon gas and hydrogen into the growth chamber, heating the mixed gas up to a synthetic temperature of 1000 DEG C, and reducing the synthetic temperature to room temperature after maintaining for certain reaction time; (3) uniformly mixing powder of a product acquired in the primary synthesis, heating the product up to a secondary synthetic temperature of between 1600 and 2000 DEG C, synthesizing for 2 to 10 hours, and reducing the synthesized product to the room temperature to acquire high-purity SiC powder lot applicable to the semiconductor SiC single crystal growth. The method adopts a secondary synthetic method, not only can ensure that Si and C simple substance which are remained during the primary synthesis can completely react, but also can effectively remove most impurity elements carried in the Si powder and the C powder.
Technology Topic
Image
Examples
- Experimental program(4)
Example Embodiment
Example Embodiment
Example Embodiment
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
Property | Measurement | Unit |
Granularity | <= 20.0 | µm |
Granularity | 100.0 ~ 200.0 | µm |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
Description & Claims & Application Information
We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Similar technology patents
Method for preparing thin-diameter zirconium oxide fibers and fiber board thereof
ActiveCN102181962ALow costHigh purityFibreboardInorganic material artificial filamentsYttriumAdhesive
Owner:南京理工宇龙新材料科技股份有限公司
Method for synthesizing dialkyl hypophosphorous acid
Owner:TSINGHUA UNIV
Method of preparing high pure cathode copper by using PCB acid chlorine copper etching solution sewage
InactiveCN101550488AHigh purityReduce entrainmentPhotography auxillary processesProcess efficiency improvementIonRegenerative cycle
Owner:CENT SOUTH UNIV +1
Material formula of polyurethane of enzymolysis lignin, and preparation method
Owner:FUZHOU UNIVERSITY
Classification and recommendation of technical efficacy words
- High purity
- Reduce impurity concentration
Control of impurities in reaction product of rhodium-catalyzed methanol carbonylation
InactiveUS20080293966A1Improve the level ofHigh purityOrganic compound preparationCarboxylic preparation from carbon monoxide reactionProtein carbonylCarbonylation
Owner:CELANESE INT CORP
Glucosyl Stevia Composition
ActiveUS20120214752A1High purityOvercome disadvantagesMilk preparationBiocideChemistrySteviol glycoside
Owner:PURECIRCLE SDN BHD
Monoamino compound and organic luminescence device using the same
InactiveUS20050244670A1High purityHigh efficiencyOrganic chemistryDischarge tube luminescnet screensHigh luminanceCompound (substance)
Owner:CANON KK
Nanoscale lithium titanate compound and preparation method thereof
ActiveCN101630732AEnabling molecular-scale mixingHigh purityElectrode manufacturing processesActive material electrodesLithium compoundCharge and discharge
Owner:SHENZHEN DYNANONIC