Method for preparing heat sink composite material for semiconductor substrate

Abstract

The invention relates to a preparation method of a semiconductor substrate heat sink composite material, which mainly comprises the steps of pre-treating a tantalum wire, pre-treating a silicon substrate, placing a pretreated silicon wafer into a reaction chamber of a hot wire chemical vapor deposition device to be used as a deposition substrate; vacuuming, introducing reactants hydrogen gas and acetone, and allowing nucleation of a microcrystalline diamond film; adjusting the flow rate, temperature and other conditions of the acetone and the hydrogen gas, and allowing growth of the microcrystalline diamond film; allowing growth of a nano-crystal diamond film; and adjusting the flow rate of the acetone and the hydrogen gas, controlling the substrate temperature at 600-650 DEG C, and allowing the film to grow for 3-5 hours to obtain a diamond composite film with a relatively smooth surface, i.e. the semiconductor substrate heat sink composite material. The inventive semiconductor substrate heat sink composite material has the advantages of simple equipment, rapid growth speed, good quality, easy implementation of large area deposition, etc.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor substrate heat sink composite material, and belongs to the technical field of manufacturing technology of inorganic non-metallic material devices. Background technique [0002] For a long time, the development of silicon technology in the semiconductor industry has followed Moore's law, and the number of transistors on an integrated chip increases exponentially with time. However, this momentum will be hampered by material performance limitations, the biggest of which is heat dissipation. ITRS (International Technology Roadmap for Semiconductors) predicts that between 2005 and 2009, the maximum junction temperature of high-power chips will reach 85°C. [0003] The SOI (silicon on insulator) technology that is widely used in the integrated circuit industry is developed instead of the original CMOS technology. The only advantage SOI has over bulk silicon is that silicon dioxide provides el...

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Problems solved by technology

However, the surface hardness of the diamond film is very high, and it takes time and effort to polish it.

However, compared with conventional micro-diamond films, nano-diamond film grains can be as small as several nanometers, so its surface is smooth and its coefficient of friction is small. At the same time, its hardness is about 10-20% lower than conventional diamond, greatly Reduced its polishing strength

[0007] But on the other hand, the nanoscale grain size of the nanodiamond film is an unfavorable factor for the thermal conductivity of the material

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