Light absorption layer material for film solar battery and preparation method thereof

A technology for thin-film solar cells and light-absorbing layers, which is applied in the manufacture of circuits, electrical components, and final products to achieve high efficiency, improved uniformity, composition controllability, and high-quality effects

A technology for thin-film solar cells and light-absorbing layers, which is applied in the manufacture of circuits, electrical components, and final products to achieve high efficiency, improved uniformity, composition controllability, and high-quality effects

CN101330110AInactive Publication Date: 2008-12-24CENT SOUTH UNIV
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] On the Mo foil, a Cu-Si-Sn alloy prefabricated layer with a thickness of 1.5 μm is formed by simultaneous sputtering deposition of Cu targets, Si targets and Sn targets. The sputtering process parameters are: the distance between the substrate and the target is 6 cm, and the background vacuum 5×10 -4 , the sputtering gas is 99.99% Ar, the sputtering pressure is 1Pa, the sputtering power of each target is 75-125W, and the substrate temperature is room temperature during sputtering. Put the deposited Cu-Si-Sn alloy prefabricated layer into a solid source vulcanization treatment vacuum chamber, and heat it to 600°C with a resistive contact heat source; at the same time, use a resistive contact heat source to heat the solid sulfur source to 200°C, the sulfur atoms and the prefabricated layer The metal atoms of the compound reaction occur, and after 1 hour, the stoichiometric composition is finally obtained as Cu 2 Si 0.45 sn 0.5 6S 3.05 Copper-silicon-tin-sulfur solar c...

Embodiment 2

[0029] CuSiSn alloy target (atomic ratio Cu:Si:Sn=2:0.6:0.4) was deposited on Mo foil by single-target magnetron sputtering to form a Cu-Si-Sn alloy prefabricated layer with a thickness of 2 μm. The sputtering process parameters were : The distance between substrate and target is 8cm, and the background vacuum is 5×10 -4 , the sputtering gas is 99.99% Ar, the sputtering pressure is 1Pa, the sputtering power is 80-120W, and the substrate temperature is room temperature during sputtering. Put the deposited Cu-Si-Sn alloy prefabricated layer into the solid-state source vulcanization treatment vacuum chamber, and heat it to 600°C with a resistive contact heat source; at the same time, use a resistive contact heat source and halogen tungsten lamp to jointly heat the solid-state sulfur source to 240°C , and feed Ar as the carrier gas of protective gas and sulfur vapor; the sulfur atoms react with the metal atoms in the prefabricated layer, and after 1 hour, the stoichiometric compos...

Embodiment 3

[0032] Except that the Si target in Example 1 was replaced by a Ge target, the others were the same as in Example 1, and finally a copper-germanium-tin-sulfur solar cell light absorption layer was obtained.

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Abstract

The invention relates to a light absorption layer material of a thin film solar cell and a preparation method thereof. The light absorption layer material adopts Cu2SixSn1-xS3 semiconductor film or Cu2GexSn1-xS3 semiconductor film (X is equal to 0 to 1) in Cu2MS3 (M is Si, Ge or Sn) serial compounds. The preparation method comprises the steps that a Cu-Si-Sn alloy prefabricated layer or a Cu-Ge-Sn alloy prefabricated layer is deposited on a substrate through magneto-sputtering firstly, and then the vulcanization treatment is performed to the prefabricated layer. The material and the preparation method can solve the problems with the resource shortage and the environmental pollution in the development of the prior solar cell, and open up a new way for the development of the solar cell.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and new energy, and relates to a compound semiconductor thin film material used as a light absorption layer of a thin film solar cell and a preparation method thereof. Background technique [0002] The development of solar cells is an effective way to solve the worsening energy crisis and environmental pollution. Among all kinds of solar cells, CuIn 1-x Ga x Se 2 (CIGS) thin-film solar cells are considered to be one of the most important and most promising solar cells due to their excellent photovoltaic properties. However, CuIn 1-x Ga x Se 2 In, Ga, and Se in the compound are scattered metals, which are expensive and have limited reserves. Among them, In has the characteristics of scarcity and strategic importance. At present, the global output of In is only about 300t / a, which is mainly used in many high-tech fields such as flat panel display coating, information materials...

Claims

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Application Information

Patent Timeline
24 Dec 2008
Publication
CN101330110A
IPC
H01L31/032; H01L31/18
CPC
Y02P70/50
Inventors
赖延清; 刘芳洋