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Large-scale preparation method of hyperfine nanostructure and use thereof

A nano-structure and ultra-fine technology, which is applied in the field of preparation of ultra-fine nano-structures, achieves the effects of high repeatability, easy automatic control, and easy damage

Inactive Publication Date: 2009-02-04
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has certain limitations in terms of precise control, large-scale integration, and material selection.

Method used

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  • Large-scale preparation method of hyperfine nanostructure and use thereof
  • Large-scale preparation method of hyperfine nanostructure and use thereof
  • Large-scale preparation method of hyperfine nanostructure and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Embodiment 1, processing ultra-fine nanopores on zinc oxide nanowires / nanorods

[0038] like figure 1 As shown in (a), the zinc oxide nanowire diameter is 40 nanometers, the exposure time is 10 seconds, the electron beam spot diameter is 1 nanometer, and the nanopore diameter is 0.8 nanometers.

[0039] (b) In the figure, the diameter of the ZnO nanorod is 300 nm, the exposure time is 15 minutes, the diameter of the electron beam spot is about 6 nm, and the diameter of the nanopore is about 5 nm. In addition, the upper right corner is the converging beam diffraction pattern obtained from the experiment, and the lower left corner is the converging beam diffraction pattern obtained by calculation, from which the thickness of the nanorods can be determined.

Embodiment 2

[0040] Embodiment 2, ultra-fine nanopores processed on different materials

[0041] like figure 2 As shown, (a) is a nanohole processed on a Si[110] film with a thickness of 160 nm. The exposure time is 60 seconds, the diameter of the electron beam spot is 9 nm, and the diameter of the nanopore is 5 nm.

[0042] (b) The picture shows Si at 100 nm thick 3 N4 The nanohole processed on the nanowire, the exposure time is 200 seconds, the diameter of the electron beam spot is 9 nanometers, and the diameter of the nanohole is 4 nanometers.

[0043] (c) Pictured in 95nm Al 2 o 3 For the nanoholes processed on the film, the exposure time is 10 seconds, the diameter of the electron beam spot is 3 nanometers, and the diameter of the nanopores is 3 nanometers.

[0044] (d) The picture shows nanoholes fabricated on 80 nm thick AlN[141] nanorods, with an exposure time of 100 s, an electron beam spot diameter of 3 nm, and a nanopore diameter of 2.5 nm.

[0045] (e) The picture shows n...

Embodiment 3

[0049] Embodiment 3, ultrafine nanohole arrays and nanograting slits processed on zinc oxide nanowires and nanofilms

[0050] like image 3 As shown, (a) is an ultra-fine nanohole array processed on a zinc oxide nanowire, the exposure time is 20 seconds, the diameter of the electron beam spot is 3 nanometers, and the diameter of the nanohole is 3 nanometers. (b) is a high-resolution image of (a), with nanopore spacing as small as 1.5 nm.

[0051] (c) The picture shows the nanohole array processed on the 30 nm thick nickel film, the exposure time is 20 seconds, the diameter of the electron beam spot is 5 nm, and the diameter of the nanohole is 6 nm. (d) is a magnified image of (c), and the Fresnel diffraction rings around the hole are clearly visible.

[0052] Figures (e) and (f) are nanohole arrays and nanograting slits processed on a 100 nm thick ZnO film, respectively. Wherein, the diameter of the nanohole is 3 nanometers, and the distance between the nanoholes is 15 nano...

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Abstract

The invention discloses a method for preparing hyperfine nanometer structure in a large scale and the application. The method consists of: 1) putting the object to be processed in a field transmission electron microscope with accelerating voltage more than 200kV; regulating the amplifying multiple of the field transmission electron microscope to 100KX; converging transmission electron beam into a beam spot of 1-10nm; 2) the beam spot is moved to the position where the hyperfine nanometer structure is needed to be prepared on the surface of the object to be processed to have an exposure, thus obtaining the hyperfine nanometer structure on the position; 3) moving the beam spot in the procedure 2) to the next position needed for preparing the hyperfine nanometer structure; repeating the procedures to obtain the hyperfine nanometer structure including a nanometer hole and a nanometer raster slit. The processing precision of the method is 1nm; the penetrating depth can reach 300 nanometers; the controllability and repeatability are high; a random two dimensional array can be arranged; the method has extensive application in preparing a DNA resequencing device, an atomic wave diffraction device, and a single particle probing device.

Description

technical field [0001] The invention relates to a method for preparing an ultrafine nanostructure and its application, in particular to a method for large-scale preparation of an ultrafine nanostructure and its application. Background technique [0002] Nanopores with a diameter of less than 5 nanometers are the core components of devices such as DNA molecular sequencing, atomic wave diffraction, and single-particle detection (S.Howorka, S.Cheley, and H.Bayley, Nat.Biotechnol., 19, 636, 2001; L. Hao, J.C. Macfarlane, et al, IEEE Trans. Appl. Supercond., 15, 514, 2005; J. Taniguchi, Phys. Rev. Lett., 94, 065301, 2005; A.D. Cronin and J.D. Perreault, Phys. Rev. .A, 70, 043607, 2004). Nanohole arrays with feature sizes greater than 20 nm can be obtained by focused ion beam (FIB) or chemical etching. However, nanopores with a diameter of only a few nanometers are quite difficult to fabricate. At present, the method adopted in the world is to process holes of about 20 nanomete...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 张敬民俞大鹏
Owner PEKING UNIV
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