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Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient

A technology of oxide semiconductors and thin film transistors, which is applied in the direction of transistors, semiconductor devices, semiconductor/solid-state device manufacturing, etc., and can solve the problems of uneven polycrystalline structure and interface inequality

Inactive Publication Date: 2009-04-08
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, since there is a portion in which the grain size changes in the thickness direction at an early stage, its polycrystalline structure tends to become uneven
Since the surface of the insulating film has a surface morphology according to the grain size, there is a problem that the interface between the channel layer and the gate insulating film or the interface between the gate insulating film and the gate electrode metal becomes uneven

Method used

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  • Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient
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  • Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient

Examples

Experimental program
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Effect test

example 1

[0065] In this example, prepare figure 1 In the shown reverse staggered (bottom gate type) MISFET element, the amorphous silicon oxynitride used to form the gate insulating film has such an oxygen concentration distribution along its thickness direction that the oxygen concentration becomes high. First, a gate terminal having a thickness of Ti: 10 nm / Au: 100 nm was formed on a glass substrate using photolithography and lift-off. In addition, a-SiO with a thickness of 100 nm was formed thereon by sputtering x N y insulation layer. At this time, the Si 2 N 3 The target is used as a sputtering target, and the Ar / O 2 A mixed gas is used as a sputtering gas. change Ar / O 2 The oxygen concentration of the mixed gas is such that the insulating layer has the above-mentioned oxygen concentration distribution. Then, an amorphous oxide semiconductor film to be used as a channel layer was formed thereon to a thickness of 50 nm at room temperature by a sputtering method. Formed us...

example 2

[0071] In this example, prepare figure 2 In the staggered (top gate) type MISFET element shown, first, a film having a thickness of Ti: 5nm / Au: 40nm is stacked on a glass substrate 1, and a drain terminal 4 and a source terminal are formed by photolithography and lift-off 3. An amorphous In-Ga-Zn-O film having a metal composition ratio of In:Ga:Zn=1.00:0.94:0.65 was formed with a thickness of 30 nm for the channel layer 2 by sputtering. In addition, 100nm thick a-SiO was formed on it by sputtering x N y The insulation layer 5. At this time, use Si 2 N 3 target as a sputtering target and using Ar / O 2 The mixed gas is used as the sputtering gas. By changing Ar / O 2 The oxygen concentration of the mixed gas causes the insulating layer to have an oxygen concentration distribution, so that the oxygen concentration of the insulating layer becomes higher on the interface side with the oxide semiconductor. Further, a film having a thickness of Ti: 5 nm / Au: 40 nm is stacked th...

example 3

[0075] In this example, the use of Figure 7 The TFT display device shown. The manufacturing process of this TFT is the same as that of Example 2. In the above TFT, the short side of the island of the ITO film for forming the drain electrode was extended to 100 μm, the extended 90 μm portion was left, and after wiring was fixed to the source and gate electrodes, the TFT was covered with an insulating layer. A polyimide film was coated thereon and the resultant was subjected to rubbing treatment. On the other hand, similarly, a plastic substrate on which an ITO film and a polyimide film were formed and subjected to rubbing treatment was prepared. This substrate was opposed to the above-prepared substrate on which the above-mentioned TFT was formed with a gap of 5 µm, and a nematic liquid crystal was injected into the gap. A pair of polarizing plates are further arranged on both sides of the structure. Here, when a voltage is applied to the source electrode of the TFT while ...

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Abstract

The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

Description

technical field [0001] The present invention relates to a thin film transistor including amorphous silicon containing at least O and N as a gate insulating film, and a display device using the transistor. Background technique [0002] In recent years, as also disclosed in Japanese Patent Application Laid-Open No. 2002-076356, development of thin film transistors (TFTs) each of which will contain a transparent conductive oxide containing ZnO as a main component has been actively carried out. A polycrystalline thin film is used for the channel layer. [0003] Since the above thin film can be formed into a film at low temperature and is transparent to visible light, a flexible transparent TFT can be formed on a substrate such as a plastic plate or film. [0004] Furthermore, Japanese Patent Application Laid-Open No. 2003-086808 discloses that in a thin film transistor having a transparent semiconductor using ZnO or the like, an insulating layer is formed in a two-layer structu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786
CPCH01L29/518H01L21/363H01L21/02554H01L29/7869H01L21/02565H01L21/02631H01L21/02422H01L21/28202H01L29/4908H01L29/66969
Inventor 林享安部胜美佐野政史
Owner CANON KK
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