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Method for preparing spin microscopic micro-cantilever detector method based on electron jet plasma countermark

An electron beam and plasma technology is applied in the field of preparation of resonant spin display micro-cantilever detectors, which can solve the problems of small quality factor and high hardness of AFM oscillator materials, and achieve the effect of high sensitivity

Inactive Publication Date: 2009-04-29
XI AN JIAOTONG UNIV
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Problems solved by technology

The AFM oscillator material has high hardness and small quality factor, and the observation is limited by the surface topography test of semiconductor insulators

Method used

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Embodiment Construction

[0013] SOI substrates are divided into sizes 5×4cm 2 , Silicon dioxide is plated on both sides, and the low-pressure chemical LPCVD method is used at 800 ° C to plate a silicon dioxide film with a thickness of 2000, and subsequent heat treatment is performed.

[0014] The window array is etched on the plated silicon dioxide SOI substrate by plasma RIE etching. The method is to design the array window MASK, the MASK is divided into 4 equal parts on 4 inches, and a 10×50 window array is designed, each window is 5×4mm 2 . MASK is placed on the upper end of the silicon dioxide-plated SOI substrate, and plasma etching is performed at a rate of 50 / sec for 120 minutes to complete the plasma RIE window opening of the substrate.

[0015] Wet etch NaOH solution to etch the WAFER window of the previous plasma window opening. Use a 150ml beaker to hold 50ml of 8% NaOH solution, place it on a magnetic stirrer, immerse the substrate with plasma window opening in the 8% NaOH solution, hea...

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Abstract

The invention discloses a method for preparing self-rotation microscopic cantilever detectors based on electronic beam plasma countermark, and firstly, a substrate is plated with a silicon dioxide membrane by a low temperature and low pressure chemical LPCVD method; secondly, a plasma body RIE erodes the SOI substrate plated with the silicon dioxide membrane for eroding window arrays; thirdly, the substrate is wet-etched, and an alkaline solution is used for eroding plasma opened WAFER windows; fourthly, a window Si membrane is coated with a photo-resistant adhesive; fifthly, an oscillator shape is prepared by EBL, the electronic beams are exposed, and an electronic microscopic erosion system MASH is masked and eroded; sixthly, the oscillator microscopic shape is carved by eroding and removing the Si (parts without the photo-resistant adhesive) by the plasma body RIE; and finally, a whole oscillator microscopic shape is carved by eroding and removing the photo-resistant adhesive on the surface of the detector by the plasma body RIE. The detector prepared by the invention is characterized by high quality factor, high resolution, good stiffness coefficient, compact structure, high sensitivity and good working reliability parameter.

Description

technical field [0001] The invention relates to a resonant spin microcantilever detector, in particular to a preparation method of the resonant spin microcantilever detector under semiconductor integrated manufacturing technology. Background technique [0002] The spin microscope microcantilever detector provides the technology of invading the interior of the three-dimensional material structure under the magnetic field and the nuclear resonance segment to emit electrical signals at a specific frequency, microscanning, and detecting the microscopic image inside the material. Resonant spin microscopy has been widely used in many fields. It is a combination of microscopy and nuclear magnetic imaging. It not only has an important impact on semiconductor integration, genome sequencing, biological proteins, medicine, industrial catalysts and resource exploration, but also has new Electron spin devices, quantum computers and optical computers are of great significance. In the fie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 任韧
Owner XI AN JIAOTONG UNIV
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