Antireflective coatings
A technology of anti-reflection coating and dielectric layer, applied in the direction of photosensitive materials for optomechanical equipment, sustainable manufacturing/processing, climate sustainability, etc., can solve the problem regardless of deposition method, film mechanics, chemical properties Or unstable thermal performance, incomplete adhesion and other problems
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Embodiment 1
[0117] Example 1: BTBAS (aminosilane)
[0118] The PECVD process uses bis-tert-butylaminosilane (BTBAS) to deposit thin films on silicon wafers. The wafer was processed in a 200mm Applied Materials DxZ PECVD chamber with a 150°C susceptor temperature. The deposition conditions are listed in Table 1. Once established BTBAS (200mgm) and N 2 (750sccm) flow rate, the pressure is stabilized at 3.0 Torr. Then apply RF power (13.56MHz, 200W) for 120 seconds to deposit Si v O w N x C y H z membrane. After deposition, remove the silicon wafer from the PECVD chamber and clean the chamber with NF3 plasma. Use reflectometer to measure Si v O w N x C y H z The film thickness (190nm) and refractive index (1.53) of the film. The absorbance of the film is shown in the relationship between the extinction coefficient and the wavelength range 240-950nm by mapping figure 2 in.
[0119] Table 1: Deposition conditions and film properties of BTBAS examples
[0120]
Embodiment 2
[0121] Example 2: BTBAS-NH 3
[0122] The PECVD process uses bis-tert-butylaminosilane (BTBAS) and ammonia (NH 3 ) Will Si v O w N x C y H z The film is deposited on the silicon wafer. The wafer was processed in a 200mm Applied Materials DxZ PECVD chamber with a 150°C susceptor temperature. The deposition conditions are listed in Table 1. Once established BTBAS (200mgm), N 2 (200sccm) and NH 3 (500sccm) flow rate will stabilize the pressure at 2.5 Torr. Then apply RF power (13.56MHz, 400W) for 300 seconds to deposit Si v O w N x C y H z membrane. Remove the silicon wafer from the PECVD chamber after deposition and use NF 3 Plasma cleans the chamber. Use reflectometer to measure Si v O w N x C y H zThe film thickness (816nm) and refractive index (1.49) of the film. The absorbance of the film is shown in the relationship between the extinction coefficient and the wavelength range 240-950nm by mapping figure 2 in.
Embodiment 3
[0123] Example 3: DEMS and ATRP
[0124] Referring to Table 2, the organic-inorganic composite material was co-deposited on the silicon wafer by PECVD from α-terpinene (ATRP) and diethoxymethylsilane (DEMS). Refer to the second round A2, for example, the method conditions are 540 milligrams per minute (mgm) ATRP flow rate and 60 mgm DEMS flow rate. Use 200sccm of carrier gas CO 2 Escort chemicals into the deposition chamber. The other method conditions are as follows: the chamber pressure is 5 Torr, the wafer clamp temperature is 400°C, the spray head is 0.35 inches from the wafer, and the plasma power is 800 watts. Such as image 3 As shown in 3000cm -1 The nearby FT-IR absorption shows the significant hydrocarbon content of these films. Strong C=C absorption (~1600cm -1 ). Compared with commercial spinning anti-reflective coating materials, these materials provide such Figure 4 Extinction coefficient profile shown. After UV radiation, the measured refractive index and extinctio...
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