Self-alignment contact hole interlayer film, manufacturing method, and contact hole etching method

Abstract

The invention discloses a contact-hole interlayer film, a manufacture method thereof and a method for etching contact holes on the contact-hole interlayer film. The contact-hole interlayer film sequentially comprises two film layers, namely doped silicon oxide glass and a protective oxide film from bottom to top. After the previous process is finished, the method for manufacturing the contact-hole interlayer film comprises two steps: 1, depositing phosphorus-silicon glass on a silicon chip; and 2, depositing a protective oxide film on the phosphorus-silicon glass. The method for etching contact holes on the interlayer film comprises the steps of differentiating a region with sparse bud-shaped graphs from a region with dense bud-shaped graphs and adopting different etching processes according to different regions, so as to ensure that the contact holes can be completely opened and give consideration to the resistance, breakdown voltage, electric leakage performance and other technological electric parameters of the contact holes.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a self-aligned contact hole interlayer film and a manufacturing method of the self-aligned contact hole interlayer film. The invention also relates to a process method for etching a contact hole on the self-aligned contact hole interlayer film of the invention. Background technique [0002] As the industry's requirements for high-density memory products become more and more urgent, chip sizes are becoming smaller and smaller. This also requires a further increase in the density of memory cells. The interlayer films in the prior art all include etching barrier layers formed of doped silicon oxide glass and nitride, which cannot meet the requirement of increasing the density of memory cells. [0003] At the same time, the high-density plasma chemical vapor deposition process is generally used to grow the interlayer film. In this process, due to the different sputtering ...

AI Technical Summary

Problems solved by technology

Prior art dry etch processes are difficult to ensure open contact holes for all structures, or because of high selectivity to high density plasma and nitride sidewall fills on shallow trench isolation structures in certain bud shell pattern areas Therefore, it is also difficult to take into account the process electrical parameters such as contact hole resistance, breakdown voltage and leakage performance at the same time

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