Control method for plasma reinforced chemical meteorology deposition apparatus

A technology of meteorological deposition and enhanced chemistry, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of cumbersome, loss, equipment reliability and safety cannot be guaranteed, etc.

Inactive Publication Date: 2009-07-01
MICROCYBER CORP +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In this case, personnel misoperation will occur frequently, equipment reliability and safety cannot be guaranteed, and it also brings disadvantages to the construction of highly automated semiconductor manufacturing plants
[0004] The control system of chemical vapor deposition equipment at the present stage generally adopts a relatively s

Method used

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  • Control method for plasma reinforced chemical meteorology deposition apparatus
  • Control method for plasma reinforced chemical meteorology deposition apparatus
  • Control method for plasma reinforced chemical meteorology deposition apparatus

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Embodiment Construction

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0040] The equipment involved in the present invention is constituted as follows:

[0041] like figure 1 As shown, the plasma enhanced chemical vapor deposition equipment has two chambers, the transfer chamber LL is responsible for the transfer of the wafer; the reaction chamber RC is responsible for the wafer deposition. The two cavities need to be in harmony and cooperate with each other to meet the requirements of the process indicators. Wafer transfer is to control the manipulator to complete the actions such as taking and placing the wafers. During the deposition process, the two chambers need to work in a low-pressure environment to ensure the cleanness of the deposition environment and to avoid affecting the uniformity and cleanliness of the wafer due to environmental factors.

[0042] figure 1 Middle: ROB is the robot arm; SPI is the sample fork; ...

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Abstract

The invention belongs to a control system technique, in particular to a method for controlling plasma intensified chemical vapor phase deposition equipment. The method comprises the equipment initialization control, the wafer processing flow control and the equipment exception alarming control, wherein the equipment initialization control comprises the steps of starting a power supply of the equipment, turning on an alarm monitor, and sending initialization instructions of a sheet transmitting cavity and a reaction cavity; the wafer processing flow control comprises the steps of leading in a technique formulation, and using a batch or layer formulation to perform processing initialization, water processing and processing ending control; the equipment exception alarming control realizes the monitoring of equipment exception and failure, and performs the step treatment on the equipment alarming through an exception pretreating mechanism and an alarming response processing mechanism. The invention realizes the accurate process control to the chemical vapor phase deposition, and meets the process requirement in the process of manufacturing semiconductor devices.

Description

technical field [0001] The invention belongs to control system technology, in particular to a control method of plasma enhanced chemical vapor deposition equipment. technical background [0002] With the rapid development of semiconductor technology, the requirements for semiconductor manufacturing equipment are becoming more and more stringent, among which the requirements for chemical vapor deposition equipment are more prominent, mainly in terms of wafer deposition uniformity, deposition film thickness and deposition quality. At present, the uniformity of domestic 6-inch similar products is mostly 4%-5%, the film stress is 80-120mPa, and the refractive index is 1.45-1.48, which cannot meet the process requirements of future semiconductor manufacturing. [0003] Due to the complex structure of chemical vapor deposition equipment, it is very difficult to perform highly automated control. At present, many semiconductor deposition equipment requires a large proportion of pers...

Claims

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Application Information

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IPC IPC(8): C23C16/52C23C16/513
Inventor 于海斌王宏林跃徐皑冬周建辉康凯刘明哲胡河春
Owner MICROCYBER CORP
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