Preparation of flexible high-resistance multi-layer transparent conductive film

Abstract

The invention provides a method for preparing a flexible high resistance multi-layer transparent conductive film which includes steps as follows: forming a titanium dioxide layer, a silicon dioxide layer, an indium tin oxide layer, a zinc-aluminium oxide layer or zinc-gallium oxide layer continuously and orderly on one surface of a flexible base material PET polyester film by using a mid-frequency magnetron sputtering technique; temperature reaching to 120 DEG C or more by using heat energy generated by bombardment continuously and deposition of the high-energy particle on the PET polyester film, and controlling oxide-indium atom ratio between 1.26-1.29 for obtaining the indium tin oxide layer with crystal structure; adhibiting another side of the PET polyester with one side of the second layer PET polyester, setting a hard coating on another side of the second layer PET polyester; forming the titanium dioxide layer and the silicon dioxide layer continuously and orderly on the hard coating by using mid-frequency magnetron sputtering technique. The product has better resistance stability and durability, has advantages of short production flow, high efficiency and low cost. The product is not easy to warp in follow processing flow.

Description

technical field [0001] The invention relates to a preparation method of a flexible substrate with a high-resistance multilayer transparent conductive film, which can be used for touch screen (TP), handwriting input (PE), electroluminescence display (EL), liquid crystal display (LCD), organic light-emitting display ( OLED), etc. Background technique [0002] The existing flexible transparent conductive film has a surface resistance of about 200Ω / □, which is relatively stable. However, as the surface resistance increases, especially after the resistance value reaches 450-500Ω / □ or higher, the resistance value becomes very unstable, and the durability (the number of clicks that can be tolerated) is also very poor, and it will be damaged in subsequent use. During the process, warping and other phenomena occur. Invention patent CN1947204A proposes a laminated structure and technology to control the crystallization, crystal grain size and crystallization ratio of ITO film, so th...

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Problems solved by technology

[0003] The purpose of the present invention is to propose a method for preparing a flexible high-resistance multi-layer transparent conductive film for the problems of unstable ITO high-resistance film resistance and poor durability in products of the prior art. (150°C) has good resistance stability and durability, and the production process is short, high production efficiency, low cost, and the product does not warp in the subsequent process

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