Nitride distributed Bragg reflector and production process thereof

A Bragg mirror, nitride technology, applied in semiconductor/solid-state device manufacturing, lasers, optical resonator structures, etc. Appearance, high quality effect
CN101478115AInactive Publication Date: 2009-07-08XIAMEN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIAMEN UNIV
Publication Date
2009-07-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a nitride distributed Bragg reflecting mirror and a method for preparing the reflecting mirror, which relates to a distributed Bragg reflecting mirror, in particular to a technology for preparing nitride DBR in a gallium nitride-base microcavity light-emitting diode and a vertical cavity surface emitting laser by using chemical vapor deposition of metallorganics. The invention provides a high quality nitride distributed Bragg reflecting mirror with good surface topography and a preparation method thereof. The nitride DBR is provided with a supporting base; a GaN buffer layer is grown on the supporting base; DBR consisting of a GaN layer and an AlN layer is grown; indium is doped in the AlN or / and GaN. The method comprises the following steps: firstly, the supporting base of the C surface of a sapphire is heated and treated; a GaN nucleating layer is grown in the atmosphere of H2; a GaN buffer layer is grown after the temperature rises; subsequently, an AlN buffer layer is grown; subsequently, the temperature rises and the AlN layer is crystallized; finally, the AlN layer and the GaN layer are grown repeatedly and alternately in the atmosphere of N2 to prepare DBR; and indium is doped when one or two types of the AlN layer and the GaN layer are grown.
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Description

technical field

[0001] The present invention relates to a distributed Bragg reflector, in particular to a method for preparing gallium nitride (GaN)-based microcavity light-emitting diodes (MCLEDs) and vertical cavity surface emitting lasers (VCSEL) by metal organic chemical vapor deposition (MOCVD) Compound distributed Bragg reflector (distributed Bragg reflector referred to as DBR for short) technology. Background technique

[0002] In the preparation of nitride semiconductor light-emitting diodes, the nitride DBR is introduced to form a microcavity MCLED ([1] Nakada, N., Nakaji, M., Ishikawa, et al. Improved characteristics of InGaN multiple-quantum-welllight-emitting diode by GaN / AlGaN distributed Bragg reflector grown on sapphire [J], Appl. Phys. Lett., 2000, 76(14): 1804-1806), which can greatly improve the luminous power and directivity of the device. At the same time, the nitride DBR with high reflectivity is also used to prepare nitride VCSEL ([2]Lu T C, Kao C C, K...

Claims

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