Nitride distributed Bragg reflector and production process thereof

A Bragg mirror, nitride technology, applied in semiconductor/solid-state device manufacturing, lasers, optical resonator structures, etc. Appearance, high quality effect

Inactive Publication Date: 2009-07-08
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, due to the large lattice mismatch and thermal expansion coefficient difference between the two materials in the nitride DBR (such as: AlN / GaN, AlGaN / GaN, etc.), there are a lot of stress and the resulting dislocations in the DBR and cracks, its optical quality decreases, which makes its maximum reflectivity and stop band width much lower than the theoretical results

Method used

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  • Nitride distributed Bragg reflector and production process thereof
  • Nitride distributed Bragg reflector and production process thereof
  • Nitride distributed Bragg reflector and production process thereof

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Embodiment 1

[0014] Embodiment 1: The corresponding structural diagram of MCLED is as follows image 3As shown, the GaN buffer layer 2 is deposited on the sapphire C-plane substrate 1 by MOCVD, and then the bottom nitride DBR structure 6 is deposited, and then a multilayer structure with a total thickness several times the wavelength (3 times in the figure) is grown ( It includes at least three parts including n-GaN7, InGaN / GaN multiple quantum well (MQWs) active layer 8 and p-GaN 9 from bottom to top), and then prepares the top reflector 10. The reflector can be metal reflective film such as Ag or Al or DBR. The n-type electrode 11 and the p-type electrode 12 can be formed on the n-GaN 7 and the p-GaN 9 shown in the figure respectively by photolithography, coupled plasma etching (ICP) and sputtering processes.

Embodiment 2

[0015] Embodiment 2: The corresponding structural diagram of VCSEL is as follows Figure 4 , using MOCVD to deposit a GaN buffer layer 2 on a sapphire C-plane substrate 1, then deposit a bottom nitride DBR structure 13, and re-grow a multilayer structure with a total thickness several times the wavelength (3 times in the figure) (from bottom to top in order Including n-GaN 14, InGaN / GaN multi-quantum well (MQWs) active layer 15 and p-GaN 16 etc. at least three parts), finally depositing top DBR structure 17. Dielectric film or nitride DBR can be selected according to needs. What is different from MCLED is that the position of the quantum well active layer in the VCSEL should be at the peak or trough position of the standing wave formed in the microcavity 18 (that is, the position of the maximum light field intensity in the cavity), and the reflectivity of the upper and lower mirrors should be large enough To meet the laser emission conditions.

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Abstract

The invention provides a nitride distributed Bragg reflecting mirror and a method for preparing the reflecting mirror, which relates to a distributed Bragg reflecting mirror, in particular to a technology for preparing nitride DBR in a gallium nitride-base microcavity light-emitting diode and a vertical cavity surface emitting laser by using chemical vapor deposition of metallorganics. The invention provides a high quality nitride distributed Bragg reflecting mirror with good surface topography and a preparation method thereof. The nitride DBR is provided with a supporting base; a GaN buffer layer is grown on the supporting base; DBR consisting of a GaN layer and an AlN layer is grown; indium is doped in the AlN or/and GaN. The method comprises the following steps: firstly, the supporting base of the C surface of a sapphire is heated and treated; a GaN nucleating layer is grown in the atmosphere of H2; a GaN buffer layer is grown after the temperature rises; subsequently, an AlN buffer layer is grown; subsequently, the temperature rises and the AlN layer is crystallized; finally, the AlN layer and the GaN layer are grown repeatedly and alternately in the atmosphere of N2 to prepare DBR; and indium is doped when one or two types of the AlN layer and the GaN layer are grown.

Description

technical field [0001] The present invention relates to a distributed Bragg reflector, in particular to a method for preparing gallium nitride (GaN)-based microcavity light-emitting diodes (MCLEDs) and vertical cavity surface emitting lasers (VCSEL) by metal organic chemical vapor deposition (MOCVD) Compound distributed Bragg reflector (distributed Bragg reflector referred to as DBR for short) technology. Background technique [0002] In the preparation of nitride semiconductor light-emitting diodes, the nitride DBR is introduced to form a microcavity MCLED ([1] Nakada, N., Nakaji, M., Ishikawa, et al. Improved characteristics of InGaN multiple-quantum-welllight-emitting diode by GaN / AlGaN distributed Bragg reflector grown on sapphire [J], Appl. Phys. Lett., 2000, 76(14): 1804-1806), which can greatly improve the luminous power and directivity of the device. At the same time, the nitride DBR with high reflectivity is also used to prepare nitride VCSEL ([2]Lu T C, Kao C C, K...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/125H01S5/028H01L33/00H01L21/205
Inventor 张保平尚景智
Owner XIAMEN UNIV
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