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Method for manufacturing miniaturized fluxgate sensor

A fluxgate sensor and a manufacturing method technology, which are applied in chemical instruments and methods, transfer sensing components using electric/magnetic devices, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the mechanical properties of photoresist Poor, external impact, poor thermal stability and other problems, to solve the uniformity and yield, improve flatness, good stability

Inactive Publication Date: 2009-07-15
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the author uses photoresist as the insulating layer. Photoresist has the disadvantages of poor mechanical properties, low strength, poor insulation and poor thermal stability, and is greatly affected by external shocks.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1), sputtering a Cr layer on one side (referred to as the reverse side) of the cleaned glass substrate, the thickness is 100nm, the positive resist is thrown, the thickness of the photoresist is 5 μm, the drying temperature of the photoresist is 95 ° C, the time 30 minutes; after the substrate is exposed and developed, the Cr layer is etched by a chemical wet process; the photoresist is removed, the polyimide is spun and dried and cured, the thickness is 3 μm, and the double-sided overlay alignment mark is obtained;

[0037] (2) Deposit a Cr / Cu bottom layer on the other side of the substrate (referred to as the front side) with a thickness of 80 nm. The following processes are all carried out on the front side;

[0038] (3) Throw away the positive resist, the thickness of the photoresist is 10 μm, the drying temperature of the photoresist is 95 ° C, and the time is 60 minutes; the double-sided overlay exposure and development are obtained to obtain the light of the bot...

Embodiment 2

[0047] (1), sputtering a Cr layer on one side (referred to as the reverse side) of the cleaned glass substrate, the thickness is 200nm, the positive resist is thrown, the thickness of the photoresist is 8 μm, the drying temperature of the photoresist is 95 ° C, the time 30 minutes; after the substrate is exposed and developed, the Cr layer is etched by a chemical wet process; the photoresist is removed, the polyimide is spun and dried and cured, and the thickness is 4 μm to obtain a double-sided overlay alignment mark;

[0048] (2) Deposit a Cr / Cu bottom layer on the other side of the substrate (referred to as the front side) with a thickness of 90 nm. The following processes are all carried out on the front side;

[0049] (3) Throw away the positive resist, the thickness of the photoresist is 15 μm, the drying temperature of the photoresist is 92 ° C, and the time is 60 minutes; the double-sided overlay exposure and development are obtained to obtain the light of the bottom c...

Embodiment 3

[0058] (1), sputtering a Cr layer on one side (referred to as the reverse side) of the cleaned glass substrate, the thickness is 300nm, the positive resist is thrown, the thickness of the photoresist is 10 μm, the drying temperature of the photoresist is 95 ° C, the time 30 minutes; after the substrate is exposed and developed, the Cr layer is etched by a chemical wet process; the photoresist is removed, the polyimide is dried and cured, the thickness is 5 μm, and the double-sided overlay alignment symbols are obtained;

[0059] (2) Deposit a Cr / Cu bottom layer on the other side of the substrate (referred to as the front side) with a thickness of 80-100 nm. The following processes are all carried out on the front side;

[0060] (3) Throw away the positive resist, the thickness of the photoresist is 20 μm, the drying temperature of the photoresist is 90 ° C, and the time is 60 minutes; double-sided overlay exposure and development, to obtain the light of the bottom coil of the ...

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Abstract

The invention provides a method for producing a minimized fluxgate sensor in the micro electromechanical technical field, which comprises the following steps: producing a double-sized alignment symbol; sputtering a bottom layer; flinging positive photoresists, exposing and developing; plating a drive coil and a bottom layer coil of a receiving coil, connecting a conductor with a pin of the coil; removing photosensitive resist and a bottom layer; flinging polyimide, solidifying and polishing; sputtering the bottom layer; flinging positive photoresists, exposing and developing; plating a magnetic core, connecting the conductor with a pin; removing positive photoresists and the bottom layer; flinging polyimide, solidifying and polishing; sputtering the bottom layer; flinging the positive photoresists, exposing and developing; plating the drive coil and a top layer coil of the receiving coil and a pin; removing the photosensitive resist and the bottom layer; and magnetic annealing. The invention solves the problems of the traditional fluxgate sensor of poor stability, poor repetitiveness and poor mass production, ensures that the production technique is compatible with the large-scale integrated circuit technique, can be manufactured by integrating the interface circuit, and is widely applied in a plurality of new fields.

Description

technical field [0001] The invention relates to a method for manufacturing a magnetic sensor in the field of micro-electromechanical technology, in particular to a method for manufacturing a miniaturized fluxgate sensor based on micro-electro-mechanical system (MEMS) technology. Background technique [0002] A magnetic sensor is a solid-state device that can both sense a magnetic field and obtain information from it. It converts information related to magnetic induction into an electrical signal. Using magnetic sensors to detect and measure magnetic fields, especially for weak magnetic fields, has very important application prospects and technical value in automotive electronics, industrial process control, biomedicine, aerospace, etc. As a high-sensitivity weak magnetic field sensor, it can be widely used in electronic compass and navigation systems of ships and vehicles, space interstellar magnetic field measurement and application, aircraft and micro-satellite flight atti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81C5/00B81B7/02G01D5/12
Inventor 周勇雷冲周志敏丁文
Owner SHANGHAI JIAO TONG UNIV
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