Device and method for manufacturing process gases for steam phase separation

Abstract

Liquefied gas (34) from a tank (3) passes via the dosing unit (5) through an evaporator (2) converting it to a gas. This is fed to a reactor (20). An energy source (21) produces a reactive zone (32) there. The reaction products are used to coat the workpiece (30). The mass flowrate of the gas in the reactor is adjusted by a unit controlling the flow of the liquid gas (40) into the evaporator. For plasma-assisted vapor phase deposition of layers onto workpieces, the reactor is evacuated by a pump (26). The gas is supplied to the evacuated region. Plasma is excited there, using an electromagnetic field. The products coat the workpiece. The volumetric flow set by dosing is preferably about 20 nl / min - 10 mu l / min. Dosing precision is preferably 0.3 mu l / min or better. The process gas component is mixed with a second gas in the evaporator (2). A mass flowrate sensor measures the flow of liquid gases to the evaporator. The evaporation rate exceeds the introduction rate into the evaporator. The pressure in the reactor is controlled using a throttle valve (24) in the vacuum line to the pump. The first process gas component is a metastable substance. It has no lasting stability at 130[deg] C, or at the temperature in the evaporator. A mixture of two components at least, is dosed in liquid form. A first process gas component is vaporized and supplied to the reactor. At a temperature of 130[deg] C, this has a vapor pressure preferably less than 50mbar. A polyether is a component of the first process gas. This is preferably a non-cyclic polyether, especially a mono-, di-, tri-, tetra-, penta-, or hexaethylene glycol-dimethyl ether, preferably tetraethylene glycol-dimethyl ether. It is vaporized as the first process gas component. A polyethylene glycol-containing- or polyethylene glycol-like coating is deposited on the workpiece. The pulse energy used, does not exceed 3 joules. An independent claim IS INCLUDED FOR corresponding apparatus.

Description

technical field [0001] The present invention generally relates to the deposition of functional layers on substrates. In particular, the present invention relates to chemical vapor deposition and the measurement of materials used for vapor deposition. Background technique [0002] An alkane and polyamine solvent composition is disclosed in US 2001 / 0004470A1. This solvent composition is used to provide fluids from organometallic precursor substances for chemical vapor deposition to deposit, for example, so-called SBT coatings for data storage (SrBi 2 Ta 2 o 9 coating). To convert the precursors into the gas phase, a method of flash evaporation is used. In this method, partial evaporation is achieved by reducing the pressure. [0003] DE 199 60 333 A1 describes a device for producing a gas mixture consisting of HMDSO (hexamethyldisiloxane) and oxygen as process gas for plasma coating. For this purpose, several packing packs are arranged one above the other in an elongate...

AI Technical Summary

Problems solved by technology

[0005] However, it can be seen that the bubbler is difficult to set for the precursor flow rate according to the production stability because the pressure, temperature and the flow rate of the precursor gas all have a great influence on the evaporation rate

Images